Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

ABSTRACT

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a carrier substrate. Memory stack structures vertically extend through the alternating stack. Each memory stack structure includes a respective vertical semiconductor channel and a respective memory film. A pass-through via structure vertically extends through a dielectric material portion that is adjacent to the alternating stack. The memory die can be bonded to a logic die containing peripheral circuitry for supporting operations of memory cells within the memory die. A distal end of each of the vertical semiconductor channels is physically exposed by removing the carrier substrate. A source layer is formed directly on the distal end each of the vertical semiconductor channels. A backside bonding pad or bonding wire is formed to be electrically connected to the pass-through via structure.

RELATED APPLICATIONS

The instant application is a continuation-in-part application of U.S.patent application Ser. No. 16/274,687 filed on Feb. 13, 2019, theentire contents of which care incorporated herein by reference.

FIELD

The present disclosure relates generally to the field of semiconductordevices, and particularly to bonded three-dimensional memory devices andmethods of making the same by replacing a carrier substrate with sourcelayer and contact structures.

BACKGROUND

A three-dimensional memory device including a three-dimensional verticalNAND strings having one bit per cell is disclosed in an article by T.Endoh et al., titled “Novel Ultra High Density Memory With AStacked-Surrounding Gate Transistor (S-SGT) Structured Cell”, IEDM Proc.(2001) 33-36. Support circuitry for performing write, read, and eraseoperations of the memory cells in the vertical NAND strings typicallyare provided by complementary metal oxide semiconductor (CMOS) devicesformed on a same substrate as the three-dimensional memory device. using

SUMMARY

According to an aspect of the present disclosure, a semiconductorstructure comprising a memory die bonded to a logic die is provided. Thememory die comprises: an alternating stack of insulating layers andelectrically conductive layers; memory stack structures extendingthrough the alternating stack, wherein each of the memory stackstructures comprises a respective vertical semiconductor channel and arespective memory film; a dielectric material portion in contact withsidewalls of the alternating stack; and a source layer comprising afirst conductive material and electrically connected to end portions ofthe vertical semiconductor channels that are distal from an interfacebetween the logic die and the memory die.

According to another aspect of the present disclosure, a method offorming a semiconductor structure is provided, which comprises: forminga memory die over a carrier substrate, wherein the memory die comprisesmemory stack structures that vertically extend through an alternatingstack of insulating layers and electrically conductive layers, adielectric material portion that contacts sidewalls of the alternatingstack, and a pass-through via structure that vertically extends throughthe dielectric material portion, wherein each of the memory stackstructures comprises a respective vertical semiconductor channel and arespective memory film; physically exposing a distal end of each of thevertical semiconductor channels and a distal end of the pass-through viastructure after removing the carrier substrate; forming a source layercomprising a first conductive material directly on a semiconductormaterial of the distal end of each of the vertical semiconductorchannels; and forming a connection pad comprising a second conductivematerial that is different from the first conductive material directlyon the pass-through via structure and the dielectric material portion,wherein the connection pad is electrically isolated from the sourcelayer.

According to yet another aspect of the present disclosure, asemiconductor structure comprising a memory die bonded to a logic die isprovided. The memory die comprises: an alternating stack of insulatinglayers and electrically conductive layers; memory stack structuresextending through the alternating stack, wherein each of the memorystack structures comprises a respective vertical semiconductor channeland a respective memory film; a dielectric material portion in contactwith sidewalls of the alternating stack; a source layer comprising afirst portion of a conductive material and electrically connected to endportions of the vertical semiconductor channels that are distal from aninterface between the logic die and the memory die; a pass-through viastructure having a vertical extent that is greater than a verticalthickness of the alternating stack and vertically extending through thedielectric material portion; and a connection pad comprising a secondportion of the conductive material, contacting a distal surface of thepass-through via structure, and electrically isolated from the sourcelayer.

According to still another aspect of the present disclosure, a method offorming a semiconductor structure is provided, which comprises: forminga memory die over a carrier substrate, wherein the memory die comprisesmemory stack structures that vertically extend through an alternatingstack of insulating layers and electrically conductive layers, adielectric material portion that contacts sidewalls of the alternatingstack, and a pass-through via structure that vertically extends throughthe dielectric material portion, wherein each of the memory stackstructures comprises a respective vertical semiconductor channel and arespective memory film; physically exposing a distal end of each of thevertical semiconductor channels and a distal end of the pass-through viastructure after removing the carrier substrate; simultaneouslydepositing a conductive material directly on a material of the distalend of each of the vertical semiconductor channels and directly on thedistal end of the pass-through via structure; and patterning theconductive material into multiple portions, wherein a source layercomprising a first portion of the conductive material is formed on thedistal end of each of the vertical semiconductor channels, and aconnection pad comprising a second portion of the conductive material isformed on the pass-through via structure and is electrically isolatedfrom the source layer.

According to an aspect of the present disclosure, a semiconductorstructure comprising a memory die bonded to a logic die is provided. Thememory die comprises: an alternating stack of insulating layers andelectrically conductive layers; memory stack structures extendingthrough the alternating stack, wherein each of the memory stackstructures comprises a respective vertical semiconductor channel and arespective memory film; a dielectric material portion in contact withsidewalls of the alternating stack; a source layer electricallyconnected to end portions of the vertical semiconductor channels thatare distal from an interface between the logic die and the memory die; apass-through via structure having a vertical extent that is greater thana vertical thickness of the alternating stack and vertically extendingthrough the dielectric material portion; and a backside bonding padlocated over the dielectric material portion, electrically connected tothe pass-through via structure, and electrically isolated from thesource layer.

According to another aspect of the present disclosure, a method offorming a semiconductor structure is provided, which comprises: forminga memory die over a carrier substrate, wherein the memory die comprisesmemory stack structures that vertically extend through an alternatingstack of insulating layers and electrically conductive layers, adielectric material portion that contacts sidewalls of the alternatingstack, and a pass-through via structure that vertically extends throughthe dielectric material portion, wherein each of the memory stackstructures comprises a respective vertical semiconductor channel and arespective memory film; physically exposing a distal end of each of thevertical semiconductor channels and a distal end of the pass-through viastructure after removing the carrier substrate; forming a source layeron the distal end of each of the vertical semiconductor channels; andforming a backside bonding pad electrically connected to thepass-through via structure and electrically isolated from the sourcelayer over the dielectric material portion.

According to an aspect of the present disclosure, a three-dimensionalmemory device comprises: an alternating stack of insulating layers andelectrically conductive layers; memory stack structures extendingthrough the alternating stack, wherein each of the memory stackstructures comprises a respective vertical semiconductor channel and arespective memory film; drain regions located at a first end of arespective one of the vertical semiconductor channels; a source layerhaving a first surface and a second surface, wherein the first surfaceis located at a second end of each of the vertical semiconductorchannels. The first end of each of the vertical semiconductor channelsis closer to the logic die than the second end of each of the verticalsemiconductor channels. A semiconductor wafer is not located over asecond surface of the source layer.

According to another aspect of the present disclosure, a method offorming a three-dimensional memory device is provided, which comprises:forming an alternating stack of insulating layers and spacer materiallayers over a carrier substrate, wherein the spacer material layers areformed as, or are subsequently replaced with, electrically conductivelayers; forming memory stack structures through the alternating stack,wherein each of the memory stack structures comprises a respectivevertical semiconductor channel and a respective memory film; physicallyexposing a distal end of each of the vertical semiconductor channels byremoving the carrier substrate; and forming a source layer directly onthe distal end each of the vertical semiconductor channels.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic vertical cross-sectional view of an exemplaryincluding a carrier substrate according to the first embodiment of thepresent disclosure.

FIG. 2 is a schematic vertical cross-sectional view of the exemplarystructure after formation of an alternating stack of insulating layersand sacrificial material layers according to the first embodiment of thepresent disclosure.

FIG. 3 is a schematic vertical cross-sectional view of the exemplarystructure after formation of stepped surfaces and a stepped dielectricmaterial portion according to the first embodiment of the presentdisclosure.

FIG. 4A is a schematic vertical cross-sectional view of the exemplarystructure after formation of memory openings and support openingsaccording to the first embodiment of the present disclosure.

FIG. 4B is a top-down view of the exemplary structure of FIG. 4A. Thevertical plane A-A′ is the plane of the cross-section for FIG. 4A.

FIGS. 5A-5F are sequential schematic vertical cross-sectional views of amemory opening within the exemplary structure during formation of amemory stack structure, an optional dielectric core, and a drain regiontherein according to the first embodiment of the present disclosure.

FIG. 6 is a schematic vertical cross-sectional view of the exemplarystructure after formation of memory stack structures and support pillarstructures according to the first embodiment of the present disclosure.

FIG. 7A is a schematic vertical cross-sectional view of the exemplarystructure after formation of backside trenches according to the firstembodiment of the present disclosure.

FIG. 7B is a partial see-through top-down view of the exemplarystructure of FIG. 7A. The vertical plane A-A′ is the plane of theschematic vertical cross-sectional view of FIG. 7A.

FIG. 8 is a schematic vertical cross-sectional view of the exemplarystructure after formation of backside recesses according to the firstembodiment of the present disclosure.

FIG. 9 is a schematic vertical cross-sectional view of the exemplarystructure after formation of electrically conductive layers according tothe first embodiment of the present disclosure.

FIG. 10A is a schematic vertical cross-sectional view of the exemplarystructure after removal of a deposited conductive material from withinthe backside trench according to the first embodiment of the presentdisclosure.

FIG. 10B is a partial see-through top-down view of the exemplarystructure of FIG. 10A. The vertical plane A-A′ is the plane of theschematic vertical cross-sectional view of FIG. 10A.

FIG. 11 is a schematic vertical cross-sectional view of the exemplarystructure after formation of insulating wall structures according to thefirst embodiment of the present disclosure.

FIG. 12A is a schematic vertical cross-sectional view of the exemplarystructure after formation of contact via structures according to thefirst embodiment of the present disclosure.

FIG. 12B is a top-down view of the exemplary structure of FIG. 12A. Thevertical plane A-A′ is the plane of the schematic verticalcross-sectional view of FIG. 12A.

FIG. 13A is a schematic vertical cross-sectional view of the exemplarystructure after formation of first via level metal interconnectstructures and first line level metal interconnect structures accordingto the first embodiment of the present disclosure.

FIG. 13B is a partial see-through top-down view of the exemplarystructure of FIG. 13A. The vertical plane A-A′ is the plane of theschematic vertical cross-sectional view of FIG. 13A.

FIG. 14 is a schematic vertical cross-sectional view of the exemplarystructure that forms a first semiconductor die after formation ofadditional metal interconnect structures according to the firstembodiment of the present disclosure.

FIG. 15 is a schematic vertical cross-sectional view of a secondsemiconductor die according to the first embodiment of the presentdisclosure.

FIG. 16 is a schematic vertical cross-sectional view of a bondedassembly of the first semiconductor die and the second semiconductor dieaccording to the first embodiment of the present disclosure.

FIG. 17 is a schematic vertical cross-sectional view of the bondedassembly after removal of a distal portion of the carrier substrateaccording to the first embodiment of the present disclosure.

FIG. 18 is a schematic vertical cross-sectional view of the bondedassembly after removal of a proximal portion of the carrier substrateaccording to the first embodiment of the present disclosure.

FIGS. 19A-19C are sequential vertical cross-sectional views of a firstconfiguration for a memory opening fill structure during variousprocessing steps up to deposition of a doped semiconductor materiallayer according to the first embodiment of the present disclosure.

FIG. 20 is a vertical cross-sectional view of the bonded assembly afterdeposition of a doped semiconductor material layer according to thefirst embodiment of the present disclosure.

FIG. 21 is a vertical cross-sectional view of the bonded assembly afterpatterning the doped semiconductor material layer into a source layerand after formation of various bonding pads and attachment of bondingwires according to the first embodiment of the present disclosure.

FIGS. 22A-22C are sequential vertical cross-sectional views of a secondconfiguration for a memory opening fill structure during variousprocessing steps up to deposition of a doped semiconductor materiallayer according to an embodiment of the present disclosure.

FIGS. 23A-23O are sequential vertical cross-sectional view of a firstalternative configuration of a bonded assembly during various processingsteps up to formation of backside bonding pads according to a secondembodiment of the present disclosure.

FIGS. 23P and 23Q illustrate other embodiments of the first alternativeconfiguration of the bonded assembly of FIG. 23O.

FIGS. 24A-24I are sequential vertical cross-sectional view of a secondalternative configuration of a bonded assembly during various processingsteps up to formation of backside bonding pads according to a thirdembodiment of the present disclosure.

FIG. 24J illustrates another embodiment of the second alternativeconfiguration of the bonded assembly of FIG. 24I.

FIGS. 25A-25G are sequential vertical cross-sectional view of a thirdalternative configuration of a bonded assembly during various processingsteps up to formation of backside bonding pads according to a fourthembodiment of the present disclosure.

FIGS. 26A-26G are sequential vertical cross-sectional view of a fourthalternative configuration of a bonded assembly during various processingsteps up to formation of backside bonding pads according to a fifthembodiment of the present disclosure.

FIG. 26H illustrates another embodiment of the fourth alternativeconfiguration of the bonded assembly of FIG. 26G.

DETAILED DESCRIPTION

As discussed above, the embodiments of the present disclosure aredirected to three-dimensional memory devices and methods of formingbonded three-dimensional memory devices by replacement of a carriersubstrate with a source layer and contact structures, the variousaspects of which are described below. The embodiments of the presentdisclosure can be used to form various structures including a multilevelmemory structure, non-limiting examples of which include semiconductordevices such as three-dimensional monolithic memory array devicescomprising a plurality of NAND memory strings. The embodiments of thepresent disclosure can be used to form a bonded assembly of multiplesemiconductor dies including a memory die. Support circuitry (alsoreferred to as peripheral or driver circuitry) used to perform write,read, and erase operations of the memory cells in the vertical NANDstrings may be implemented in CMOS devices formed on a same substrate asthe three-dimensional memory device. In such devices, design andmanufacturing consideration is that degradation of CMOS devices due tocollateral thermal cycling and hydrogen diffusion during manufacture ofthe three-dimensional memory device places severe constraints onperformance of the support circuitry. Various embodiments includemethods that provide high-performance support circuitry forthree-dimensional memory device. Various embodiments include methodsthat provide a source layer in three-dimensional memory devices that iseasier to implement than conventional methods.

The drawings are not drawn to scale. Multiple instances of an elementmay be duplicated where a single instance of the element is illustrated,unless absence of duplication of elements is expressly described orclearly indicated otherwise. Ordinals such as “first,” “second,” and“third” are used merely to identify similar elements, and differentordinals may be used across the specification and the claims of theinstant disclosure. The same reference numerals refer to the sameelement or similar element. Unless otherwise indicated, elements havingthe same reference numerals are presumed to have the same composition.Unless otherwise indicated, a “contact” between elements refers to adirect contact between elements that provides an edge or a surfaceshared by the elements. As used herein, a first element located “on” asecond element can be located on the exterior side of a surface of thesecond element or on the interior side of the second element. As usedherein, a first element is located “directly on” a second element ifthere exist a physical contact between a surface of the first elementand a surface of the second element. As used herein, a “prototype”structure or an “in-process” structure refers to a transient structurethat is subsequently modified in the shape or composition of at leastone component therein. As used herein, a first electrical component iselectrically connected to a second electrical component if there existsan electrically conductive path between the first electrical componentand the second electrical component.

As used herein, a “layer” refers to a material portion including aregion having a thickness. A layer may extend over the entirety of anunderlying or overlying structure, or may have an extent less than theextent of an underlying or overlying structure. Further, a layer may bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer may be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer may extend horizontally, vertically, and/or along atapered surface. A substrate may be a layer, may include one or morelayers therein, or may have one or more layer thereupon, thereabove,and/or therebelow.

A monolithic three-dimensional memory array is one in which multiplememory levels are formed above a single substrate, such as asemiconductor wafer, with no intervening substrates. The term“monolithic” means that layers of each level of the array are directlydeposited on the layers of each underlying level of the array. Incontrast, two dimensional arrays may be formed separately and thenpackaged together to form a non-monolithic memory device. For example,non-monolithic stacked memories have been constructed by forming memorylevels on separate substrates and vertically stacking the memory levels,as described in U.S. Pat. No. 5,915,167 titled “Three-dimensionalStructure Memory.” The substrates may be thinned or removed from thememory levels before bonding, but as the memory levels are initiallyformed over separate substrates, such memories are not true monolithicthree-dimensional memory arrays. Three-dimensional memory devicesaccording to various embodiments of the present disclosure include amonolithic three-dimensional NAND string memory device, and can befabricated using the various embodiments described herein.

Generally, a semiconductor package (or a “package”) refers to a unitsemiconductor device that can be attached to a circuit board through aset of pins or solder balls. A semiconductor package may include asemiconductor chip (or a “chip”) or a plurality of semiconductor chipsthat are bonded thereamongst, for example, by flip-chip bonding oranother chip-to-chip bonding. A package or a chip may include a singlesemiconductor die (or a “die”) or a plurality of semiconductor dies. Adie is the smallest unit that can independently execute externalcommands or report status. Typically, a package or a chip with multipledies is capable of simultaneously executing as many external commands asthe total number of dies therein. Each die includes one or more planes.Identical concurrent operations can be executed in each plane within asame die, although there may be some restrictions. In case a die is amemory die, i.e., a die including memory elements, concurrent readoperations, concurrent write operations, or concurrent erase operationscan be performed in each plane within a same memory die. Each planecontains a number of memory blocks (or “blocks”), which are the smallestunit that can be erased by in a single erase operation. Each memoryblock contains a number of pages, which are the smallest units that canbe selected for programming.

Referring to FIG. 1, an exemplary structure according to a firstembodiment of the present disclosure is illustrated, which can be used,for example, to fabricate a device structure containing vertical NANDmemory devices. The exemplary structure includes a carrier substrate 9and a semiconductor material layer 10 located on a top surface of thecarrier substrate 9. In one embodiment, the carrier substrate 9 and thesemiconductor material layer 10 may be provided as a commerciallyavailable single crystalline semiconductor wafer. A surface portion ofthe single crystalline semiconductor wafer can include the semiconductormaterial layer 10, and a bulk portion of the single crystallinesemiconductor wafer can include the carrier substrate 9 that issubsequently removed, for example, by backside grinding. An interface 7between the carrier substrate 9 and the semiconductor material layer 10can be located at a depth that corresponds to a target stopping planefor the backside grinding process. Alternatively, the semiconductormaterial layer 10 can include a single crystalline or polycrystallinesemiconductor material layer provided on the carrier substrate 9including a material different from the material of the semiconductormaterial layer 10. In this case, the carrier substrate 9 can include aninsulating material (such as sapphire or silicon oxide), a conductivematerial, or a semiconductor material different from the material of thesemiconductor material layer 10. The thickness of the carrier substrate9 can be thick enough to mechanically support the semiconductor materiallayer 10 and structures to be subsequently formed thereupon. Forexample, the carrier substrate 9 can have a thickness in a range from 60microns to 1,000 microns. The thickness of the semiconductor materiallayer 10 may be in a range from 100 nm to 5,000 nm, although lesser andgreater thicknesses can also be used. The semiconductor material layer10 includes at least one elemental semiconductor material (e.g., singlecrystal silicon wafer or layer), at least one III-V compoundsemiconductor material, at least one II-VI compound semiconductormaterial, at least one organic semiconductor material, or othersemiconductor materials known in the art.

As used herein, a “semiconducting material” refers to a material havingelectrical conductivity in the range from 1.0×10⁻⁶ S/cm to 1.0×10⁵ S/cm.As used herein, a “semiconductor material” refers to a material havingelectrical conductivity in the range from 1.0×10⁻⁶ S/cm to 1.0×10⁵ S/cmin the absence of electrical dopants therein, and is capable ofproducing a doped material having electrical conductivity in a rangefrom 1.0 S/cm to 1.0×10⁵ S/cm upon suitable doping with an electricaldopant. As used herein, an “electrical dopant” refers to a p-type dopantthat adds a hole to a valence band within a band structure, or an n-typedopant that adds an electron to a conduction band within a bandstructure. As used herein, a “conductive material” refers to a materialhaving electrical conductivity greater than 1.0×10⁵ S/cm. As usedherein, an “insulator material” or a “dielectric material” refers to amaterial having electrical conductivity less than 1.0×10⁻⁶ S/cm. As usedherein, a “heavily doped semiconductor material” refers to asemiconductor material that is doped with electrical dopant at asufficiently high atomic concentration to become a conductive materialeither as formed as a crystalline material or if converted into acrystalline material through an anneal process (for example, from aninitial amorphous state), i.e., to have electrical conductivity greaterthan 1.0×10⁵ S/cm. A “doped semiconductor material” may be a heavilydoped semiconductor material, or may be a semiconductor material thatincludes electrical dopants (i.e., p-type dopants and/or n-type dopants)at a concentration that provides electrical conductivity in the rangefrom 1.0×10⁻⁶ S/cm to 1.0×10⁵ S/cm. An “intrinsic semiconductormaterial” refers to a semiconductor material that is not doped withelectrical dopants. Thus, a semiconductor material may be semiconductingor conductive, and may be an intrinsic semiconductor material or a dopedsemiconductor material. A doped semiconductor material can besemiconducting or conductive depending on the atomic concentration ofelectrical dopants therein. As used herein, a “metallic material” refersto a conductive material including at least one metallic elementtherein. All measurements for electrical conductivities are made at thestandard condition.

Referring to FIG. 2, a stack of an alternating plurality of firstmaterial layers (which can be insulating layers 32) and second materiallayers (which can be sacrificial material layer 42) is formed over thetop surface of the semiconductor material layer 10. As used herein, a“material layer” refers to a layer including a material throughout theentirety thereof. As used herein, an alternating plurality of firstelements and second elements refers to a structure in which instances ofthe first elements and instances of the second elements alternate. Eachinstance of the first elements that is not an end element of thealternating plurality is adjoined by two instances of the secondelements on both sides, and each instance of the second elements that isnot an end element of the alternating plurality is adjoined by twoinstances of the first elements on both ends. The first elements mayhave the same thickness thereamongst, or may have different thicknesses.The second elements may have the same thickness thereamongst, or mayhave different thicknesses. The alternating plurality of first materiallayers and second material layers may begin with an instance of thefirst material layers or with an instance of the second material layers,and may end with an instance of the first material layers or with aninstance of the second material layers. In one embodiment, an instanceof the first elements and an instance of the second elements may form aunit that is repeated with periodicity within the alternating plurality.

Each first material layer includes a first material, and each secondmaterial layer includes a second material that is different from thefirst material. In one embodiment, each first material layer can be aninsulating layer 32, and each second material layer can be a sacrificialmaterial layer. In this case, the stack can include an alternatingplurality of insulating layers 32 and sacrificial material layers 42,and constitutes a prototype stack of alternating layers comprisinginsulating layers 32 and sacrificial material layers 42.

The stack of the alternating plurality is herein referred to as analternating stack (32, 42). In one embodiment, the alternating stack(32, 42) can include insulating layers 32 composed of the firstmaterial, and sacrificial material layers 42 composed of a secondmaterial different from that of insulating layers 32. The first materialof the insulating layers 32 can be at least one insulating material. Assuch, each insulating layer 32 can be an insulating material layer.Insulating materials that can be used for the insulating layers 32include, but are not limited to, silicon oxide (including doped orundoped silicate glass), silicon nitride, silicon oxynitride,organosilicate glass (OSG), spin-on dielectric materials, dielectricmetal oxides that are commonly known as high dielectric constant(high-k) dielectric oxides (e.g., aluminum oxide, hafnium oxide, etc.)and silicates thereof, dielectric metal oxynitrides and silicatesthereof, and organic insulating materials. In one embodiment, the firstmaterial of the insulating layers 32 can be silicon oxide.

The second material of the sacrificial material layers 42 is asacrificial material that can be removed selective to the first materialof the insulating layers 32. As used herein, a removal of a firstmaterial is “selective to” a second material if the removal processremoves the first material at a rate that is at least twice the rate ofremoval of the second material. The ratio of the rate of removal of thefirst material to the rate of removal of the second material is hereinreferred to as a “selectivity” of the removal process for the firstmaterial with respect to the second material.

The sacrificial material layers 42 may comprise an insulating material,a semiconductor material, or a conductive material. The second materialof the sacrificial material layers 42 can be subsequently replaced withelectrically conductive electrodes which can function, for example, ascontrol gate electrodes of a vertical NAND device. Non-limiting examplesof the second material include silicon nitride, an amorphoussemiconductor material (such as amorphous silicon), and apolycrystalline semiconductor material (such as polysilicon). In oneembodiment, the sacrificial material layers 42 can be spacer materiallayers that comprise silicon nitride or a semiconductor materialincluding at least one of silicon and germanium.

In one embodiment, the insulating layers 32 can include silicon oxide,and sacrificial material layers can include silicon nitride sacrificialmaterial layers. The first material of the insulating layers 32 can bedeposited, for example, by chemical vapor deposition (CVD). For example,if silicon oxide is used for the insulating layers 32, tetraethylorthosilicate (TEOS) can be used as the precursor material for the CVDprocess. The second material of the sacrificial material layers 42 canbe formed, for example, CVD or atomic layer deposition (ALD).

The sacrificial material layers 42 can be suitably patterned so thatconductive material portions to be subsequently formed by replacement ofthe sacrificial material layers 42 can function as electricallyconductive electrodes, such as the control gate electrodes of themonolithic three-dimensional NAND string memory devices to besubsequently formed. The sacrificial material layers 42 may comprise aportion having a strip shape extending substantially parallel to themajor surface (such as the interface 7) of the substrate.

The thicknesses of the insulating layers 32 and the sacrificial materiallayers 42 can be in a range from 20 nm to 50 nm, although lesser andgreater thicknesses can be used for each insulating layer 32 and foreach sacrificial material layer 42. The number of repetitions of thepairs of an insulating layer 32 and a sacrificial material layer (e.g.,a control gate electrode or a sacrificial material layer) 42 can be in arange from 2 to 1,024, and typically from 8 to 256, although a greaternumber of repetitions can also be used. The top and bottom gateelectrodes in the stack may function as the select gate electrodes. Inone embodiment, each sacrificial material layer 42 in the alternatingstack (32, 42) can have a uniform thickness that is substantiallyinvariant within each respective sacrificial material layer 42.

While the present disclosure is described using an embodiment in whichthe spacer material layers are sacrificial material layers 42 that aresubsequently replaced with electrically conductive layers, in otherembodiments the sacrificial material layers are formed as electricallyconductive layers. In such embodiments, steps for replacing the spacermaterial layers with electrically conductive layers can be omitted.

Optionally, an insulating cap layer 70 can be formed over thealternating stack (32, 42). The insulating cap layer 70 includes adielectric material that is different from the material of thesacrificial material layers 42. In one embodiment, the insulating caplayer 70 can include a dielectric material that can be used for theinsulating layers 32 as described above. The insulating cap layer 70 canhave a greater thickness than each of the insulating layers 32. Theinsulating cap layer 70 can be deposited, for example, by chemical vapordeposition. In one embodiment, the insulating cap layer 70 can be asilicon oxide layer.

The exemplary structure can include at least one memory array region 100in which a three-dimensional array of memory elements is to besubsequently formed, at least one staircase region 300 in which steppedsurfaces of the alternating stack (32, 42) are to be subsequentlyformed, and an interconnection region 200 in which interconnection viastructures extending through the levels of the alternating stack (32,42) are to be subsequently formed.

Referring to FIG. 3, stepped surfaces are formed in the staircase region300, which is herein referred to as a terrace region. As used herein,“stepped surfaces” refer to a set of surfaces that include at least twohorizontal surfaces and at least two vertical surfaces such that eachhorizontal surface is adjoined to a first vertical surface that extendsupward from a first edge of the horizontal surface, and is adjoined to asecond vertical surface that extends downward from a second edge of thehorizontal surface. A stepped cavity is formed within the volume fromwhich portions of the alternating stack (32, 42) are removed throughformation of the stepped surfaces. A “stepped cavity” refers to a cavityhaving stepped surfaces.

The terrace region is formed in the staircase region 300, which islocated between the memory array region 100 and the interconnectionregion 200 containing the at least one semiconductor device for theperipheral circuitry. The stepped cavity can have various steppedsurfaces such that the horizontal cross-sectional shape of the steppedcavity changes in steps as a function of the vertical distance from thetop surface of the semiconductor material layer 10. In one embodiment,the stepped cavity can be formed by repetitively performing a set ofprocessing steps. The set of processing steps can include, for example,an etch process of a first type that vertically increases the depth of acavity by one or more levels, and an etch process of a second type thatlaterally expands the area to be vertically etched in a subsequent etchprocess of the first type. As used herein, a “level” of a structureincluding alternating plurality is defined as the relative position of apair of a first material layer and a second material layer within thestructure.

Each sacrificial material layer 42 other than a topmost sacrificialmaterial layer 42 within the alternating stack (32, 42) laterallyextends farther than any overlying sacrificial material layer 42 withinthe alternating stack (32, 42) in the terrace region. The terrace regionincludes stepped surfaces of the alternating stack (32, 42) thatcontinuously extend from a bottommost layer within the alternating stack(32, 42) to a topmost layer within the alternating stack (32, 42).

Each vertical step of the stepped surfaces can have the height of one ormore pairs of an insulating layer 32 and a sacrificial material layer.In one embodiment, each vertical step can have the height of a singlepair of an insulating layer 32 and a sacrificial material layer 42. Inanother embodiment, multiple “columns” of staircases can be formed alonga first horizontal direction hd1 such that each vertical step has theheight of a plurality of pairs of an insulating layer 32 and asacrificial material layer 42, and the number of columns can be at leastthe number of the plurality of pairs. Each column of staircase can bevertically offset one from another such that each of the sacrificialmaterial layers 42 has a physically exposed top surface in a respectivecolumn of staircases. In the illustrative example, two columns ofstaircases are formed for each block of memory stack structures to besubsequently formed such that one column of staircases providephysically exposed top surfaces for odd-numbered sacrificial materiallayers 42 (as counted from the bottom) and another column of staircasesprovide physically exposed top surfaces for even-numbered sacrificialmaterial layers (as counted from the bottom). Configurations usingthree, four, or more columns of staircases with a respective set ofvertical offsets among the physically exposed surfaces of thesacrificial material layers 42 may also be used. Each sacrificialmaterial layer 42 has a greater lateral extent, at least along onedirection, than any overlying sacrificial material layers 42 such thateach physically exposed surface of any sacrificial material layer 42does not have an overhang. In one embodiment, the vertical steps withineach column of staircases may be arranged along the first horizontaldirection hd1, and the columns of staircases may be arranged along asecond horizontal direction hd2 that is perpendicular to the firsthorizontal direction hd1. In one embodiment, the first horizontaldirection hd1 may be perpendicular to the boundary between the memoryarray region 100 and the staircase region 300.

A stepped dielectric material portion 65 (i.e., an insulating fillmaterial portion) can be formed in the stepped cavity by deposition of adielectric material therein. For example, a dielectric material such assilicon oxide can be deposited in the stepped cavity. Excess portions ofthe deposited dielectric material can be removed from above the topsurface of the insulating cap layer 70, for example, by chemicalmechanical planarization (CMP). The remaining portion of the depositeddielectric material filling the stepped cavity constitutes the steppeddielectric material portion 65. As used herein, a “stepped” elementrefers to an element that has stepped surfaces and a horizontalcross-sectional area that increases monotonically as a function of avertical distance from a top surface of a substrate on which the elementis present. If silicon oxide is used for the stepped dielectric materialportion 65, the silicon oxide of the stepped dielectric material portion65 may, or may not, be doped with dopants such as B, P, and/or F. In oneembodiment, the stepped dielectric material portion 65 has astepwise-increasing lateral extent that increases with a verticaldistance from the carrier substrate 9.

Optionally, drain select level isolation structures 72 can be formedthrough the insulating cap layer 70 and a subset of the sacrificialmaterial layers 42 located at drain select levels. The drain selectlevel isolation structures 72 can be formed, for example, by formingdrain select level isolation trenches and filling the drain select levelisolation trenches with a dielectric material such as silicon oxide.Excess portions of the dielectric material can be removed from above thetop surface of the insulating cap layer 70.

Referring to FIGS. 4A and 4B, a lithographic material stack (not shown)including at least a photoresist layer can be formed over the insulatingcap layer 70 and the stepped dielectric material portion 65, and can belithographically patterned to form openings therein. The openingsinclude a first set of openings formed over the memory array region 100and a second set of openings formed over the staircase region 300. Thepattern in the lithographic material stack can be transferred throughthe insulating cap layer 70 or the stepped dielectric material portion65, and through the alternating stack (32, 42) by at least oneanisotropic etch that uses the patterned lithographic material stack asan etch mask. Portions of the alternating stack (32, 42) underlying theopenings in the patterned lithographic material stack are etched to formmemory openings 49 and support openings 19. As used herein, a “memoryopening” refers to a structure in which memory elements, such as amemory stack structure, is subsequently formed. As used herein, a“support opening” refers to a structure in which a support structure(such as a support pillar structure) that mechanically supports otherelements is subsequently formed. The memory openings 49 are formedthrough the insulating cap layer 70 and the entirety of the alternatingstack (32, 42) in the memory array region 100. The support openings 19are formed through the stepped dielectric material portion 65 and theportion of the alternating stack (32, 42) that underlie the steppedsurfaces in the staircase region 300.

The memory openings 49 extend through the entirety of the alternatingstack (32, 42). The support openings 19 extend through a subset oflayers within the alternating stack (32, 42). The chemistry of theanisotropic etch process used to etch through the materials of thealternating stack (32, 42) can alternate to optimize etching of thefirst and second materials in the alternating stack (32, 42). Theanisotropic etch can be, for example, a series of reactive ion etches.The sidewalls of the memory openings 49 and the support openings 19 canbe substantially vertical, or can be tapered. The patterned lithographicmaterial stack can be subsequently removed, for example, by ashing.

The memory openings 49 and the support openings 19 can extend from thetop surface of the alternating stack (32, 42) to at least the horizontalplane including the topmost surface of the semiconductor material layer10. In one embodiment, an overetch into the semiconductor material layer10 may be optionally performed after the top surface of thesemiconductor material layer 10 is physically exposed at a bottom ofeach memory opening 49 and each support opening 19. The overetch may beperformed prior to, or after, removal of the lithographic materialstack. In other words, the recessed surfaces of the semiconductormaterial layer 10 may be vertically offset from the un-recessed topsurfaces of the semiconductor material layer 10 by a recess depth. Therecess depth can be, for example, in a range from 1 nm to 50 nm,although lesser and greater recess depths can also be used. The overetchis optional, and may be omitted. If the overetch is not performed, thebottom surfaces of the memory openings 49 and the support openings 19can be coplanar with the topmost surface of the semiconductor materiallayer 10.

Each of the memory openings 49 and the support openings 19 may include asidewall (or a plurality of sidewalls) that extends substantiallyperpendicular to the topmost surface of the substrate. A two-dimensionalarray of memory openings 49 can be formed in the memory array region100. A two-dimensional array of support openings 19 can be formed in thestaircase region 300.

FIGS. 5A-5F illustrate structural changes in a memory opening 49, whichis one of the memory openings 49 in the exemplary structure of FIGS. 4Aand 4B. The same structural change occurs simultaneously in each of theother memory openings 49 and in each support opening 19.

Referring to FIG. 5A, a memory opening 49 in the exemplary devicestructure of FIGS. 4A and 4B is illustrated. The memory opening 49extends through the insulating cap layer 70, the alternating stack (32,42), and optionally into an upper portion of the semiconductor materiallayer 10. At this processing step, each support opening 19 can extendthrough the stepped dielectric material portion 65, a subset of layersin the alternating stack (32, 42), and optionally through the upperportion of the semiconductor material layer 10. The recess depth of thebottom surface of each memory opening with respect to the top surface ofthe semiconductor material layer 10 can be in a range from 0 nm to 30nm, although greater recess depths can also be used. Optionally, thesacrificial material layers 42 can be laterally recessed partially toform lateral recesses (not shown), for example, by an isotropic etch.

Referring to FIG. 5B, a stack of layers including a blocking dielectriclayer 52, a charge storage layer 54, a tunneling dielectric layer 56,and a semiconductor channel layer 60L can be sequentially deposited inthe memory openings 49.

The blocking dielectric layer 52 can include a single dielectricmaterial layer or a stack of a plurality of dielectric material layers.In one embodiment, the blocking dielectric layer can include adielectric metal oxide layer consisting essentially of a dielectricmetal oxide. As used herein, a dielectric metal oxide refers to adielectric material that includes at least one metallic element and atleast oxygen. The dielectric metal oxide layer can subsequently functionas a dielectric material portion that blocks leakage of storedelectrical charges to control gate electrodes. In one embodiment, theblocking dielectric layer 52 includes aluminum oxide. In one embodiment,the blocking dielectric layer 52 can include multiple dielectric metaloxide layers having different material compositions. Alternatively oradditionally, the blocking dielectric layer 52 can include a dielectricsemiconductor compound such as silicon oxide, silicon oxynitride,silicon nitride, or a combination thereof. In one embodiment, theblocking dielectric layer 52 can include silicon oxide. The thickness ofthe blocking dielectric layer 52 can be in a range from 3 nm to 20 nm,although lesser and greater thicknesses can also be used. Alternatively,the blocking dielectric layer 52 can be omitted, and a backside blockingdielectric layer can be formed after formation of backside recesses onsurfaces of memory films to be subsequently formed.

Subsequently, the charge storage layer 54 can be formed. In oneembodiment, the charge storage layer 54 can be a continuous layer orpatterned discrete portions of a charge trapping material including adielectric charge trapping material, which can be, for example, siliconnitride. Alternatively, the charge storage layer 54 can include acontinuous layer or patterned discrete portions of a conductive materialsuch as doped polysilicon or a metallic material that is patterned intomultiple electrically isolated portions (e.g., floating gates), forexample, by being formed within lateral recesses into sacrificialmaterial layers 42. In one embodiment, the charge storage layer 54includes a silicon nitride layer. In one embodiment, the sacrificialmaterial layers 42 and the insulating layers 32 can have verticallycoincident sidewalls, and the charge storage layer 54 can be formed as asingle continuous layer.

In another embodiment, the sacrificial material layers 42 can belaterally recessed with respect to the sidewalls of the insulatinglayers 32, and a combination of a deposition process and an anisotropicetch process can be used to form the charge storage layer 54 as aplurality of memory material portions that are vertically spaced apart.While the present disclosure is described using an embodiment in whichthe charge storage layer 54 is a single continuous layer, embodimentsare expressly contemplated herein in which the charge storage layer 54is replaced with a plurality of memory material portions (which can becharge trapping material portions or electrically isolated conductivematerial portions) that are vertically spaced apart.

The charge storage layer 54 can be formed as a single charge storagelayer of homogeneous composition, or can include a stack of multiplecharge storage layers. The thickness of the charge storage layer 54 canbe in a range from 2 nm to 20 nm, although lesser and greaterthicknesses can also be used.

The tunneling dielectric layer 56 includes a dielectric material throughwhich charge tunneling can be performed under suitable electrical biasconditions. The charge tunneling may be performed through hot-carrierinjection or by Fowler-Nordheim tunneling induced charge transferdepending on the mode of operation of the monolithic three-dimensionalNAND string memory device to be formed. The tunneling dielectric layer56 can include silicon oxide, silicon nitride, silicon oxynitride,dielectric metal oxides (such as aluminum oxide and hafnium oxide),dielectric metal oxynitride, dielectric metal silicates, alloys thereof,and/or combinations thereof. In one embodiment, the tunneling dielectriclayer 56 can include a stack of a first silicon oxide layer, a siliconoxynitride layer, and a second silicon oxide layer, which is commonlyknown as an ONO stack. In one embodiment, the tunneling dielectric layer56 can include a silicon oxide layer that is substantially free ofcarbon or a silicon oxynitride layer that is substantially free ofcarbon. The thickness of the tunneling dielectric layer 56 can be in arange from 2 nm to 20 nm, although lesser and greater thicknesses canalso be used.

The optional semiconductor channel layer 60L includes a semiconductormaterial such as at least one elemental semiconductor material, at leastone III-V compound semiconductor material, at least one II-VI compoundsemiconductor material, at least one organic semiconductor material, orother semiconductor materials known in the art. In one embodiment, thesemiconductor channel layer 60L includes amorphous silicon orpolysilicon. The semiconductor channel layer 60L can be formed by aconformal deposition method such as low pressure chemical vapordeposition (LPCVD). The thickness of the semiconductor channel layer 60Lcan be in a range from 2 nm to 10 nm, although lesser and greaterthicknesses can also be used. A memory cavity 49′ is formed in thevolume of each memory opening 49 that is not filled with the depositedmaterial layers (52, 54, 56, 60L).

Referring to FIG. 5C, in case the memory cavity 49′ in each memoryopening is not completely filled by the semiconductor channel layer 60L,a dielectric core layer 62L can be deposited in the memory cavity 49′ tofill any remaining portion of the memory cavity 49′ within each memoryopening. The dielectric core layer 62L includes a dielectric materialsuch as silicon oxide or organosilicate glass. The dielectric core layer62L can be deposited by a conformal deposition method such as lowpressure chemical vapor deposition (LPCVD), or by a self-planarizingdeposition process such as spin coating.

Referring to FIG. 5D, the dielectric core layer 62L can be recessedselective to the material of the semiconductor channel layer 60L, forexample, by a recess etch. The material of the dielectric core layer 62Lis vertically recessed below the horizontal plane including the topsurface of the insulating cap layer 70. Each remaining portion of thedielectric core layer 62L constitutes a dielectric core 62.

Referring to FIG. 5E, the horizontal portions of the semiconductorchannel layer 60L, the tunneling dielectric layer 56, the charge storagelayer 54, and the blocking dielectric layer 52 can be removed from abovethe top surface of the insulating cap layer 70 by a planarizationprocess. A series of recess etch processes can be used, which mayinclude at least one anisotropic etch step and/or at least one isotropicetch step. Each remaining portion of the semiconductor channel layer 60Lcan be located entirety within a memory opening 49 or entirely within asupport opening 19.

Each remaining portion of the semiconductor channel layer 60Lconstitutes a vertical semiconductor channel 60. Electrical current canflow through each vertical semiconductor channel 60 when a vertical NANDdevice including the vertical semiconductor channel 60 is turned on.Within each memory opening 49, a tunneling dielectric layer 56 issurrounded by a charge storage layer 54, and laterally surrounds avertical semiconductor channel 60. Each adjoining set of a blockingdielectric layer 52, a charge storage layer 54, and a tunnelingdielectric layer 56 collectively constitute a memory film 50, which canstore electrical charges with a macroscopic retention time. In someembodiments, a blocking dielectric layer 52 may not be present in thememory film 50 at this step, and a blocking dielectric layer may besubsequently formed after formation of backside recesses. As usedherein, a macroscopic retention time refers to a retention time suitablefor operation of a memory device as a permanent memory device such as aretention time in excess of 24 hours. Each combination of a memory film50 and a vertical semiconductor channel 60 constitutes a memory stackstructure 55.

Referring to FIG. 5F, drain regions 63 can be formed by depositing adoped semiconductor material within each recessed region above thedielectric cores 62. The drain regions 63 can have a doping of a secondconductivity type that is the opposite of the first conductivity type.For example, if the first conductivity type is p-type, the secondconductivity type is n-type, and vice versa. The dopant concentration inthe drain regions 63 can be in a range from 5.0×10¹⁹/cm³ to2.0×10²¹/cm³, although lesser and greater dopant concentrations can alsobe used. The doped semiconductor material can be, for example, dopedpolysilicon. Excess portions of the deposited semiconductor material canbe removed from above the top surface of the insulating cap layer 70,for example, by chemical mechanical planarization (CMP) or a recess etchto form the drain regions 63.

Each memory stack structure 55 is a combination of a semiconductorchannel, a tunneling dielectric layer, a plurality of memory elementscomprising portions of the charge storage layer 54, and an optionalblocking dielectric layer 52. Each combination of a memory stackstructure 55, a dielectric core 62, and a drain region 63 within amemory opening 49 is herein referred to as a memory opening fillstructure 58. Each combination of a memory film 50, a verticalsemiconductor channel 60, a dielectric core 62, and a drain region 63within each support opening 19 constitutes a support pillar structure.

Referring to FIG. 6, the exemplary structure is illustrated afterformation of memory opening fill structures 58 and support pillarstructure 20 within the memory openings 49 and the support openings 19,respectively. An instance of a memory opening fill structure 58 can beformed within each memory opening 49 of the structure of FIGS. 4A and4B. An instance of the support pillar structure 20 can be formed withineach support opening 19 of the structure of FIGS. 4A and 4B. The supportpillar structures 20 are formed through a region of the alternatingstack (32, 42) that underlie the stepped surfaces and a region of thestepped dielectric material portion 65 that overlie the steppedsurfaces. Each of the support pillar structures 20 comprises asemiconductor material portion (i.e., a vertical semiconductor channel60 of the support pillar structure 20) having a same composition as thevertical semiconductor channels 60 of the memory opening fill structures58, and a dielectric layer stack (i.e., a memory film 50 of a supportpillar structure 20) containing a same set of dielectric material layersas each of the memory films 50 of the memory opening fill structures 58.While the present disclosure is described using the illustratedconfiguration for the memory stack structure, the methods of the presentdisclosure can be applied to alternative memory stack structuresincluding different layer stacks or structures for the memory film 50and/or for the vertical semiconductor channel 60.

Referring to FIGS. 7A and 7B, a contact level dielectric layer 73 can beformed over the alternating stack (32, 42) of insulating layer 32 andsacrificial material layers 42, and over the memory stack structures 55and the support pillar structures 20. The contact level dielectric layer73 includes a dielectric material that is different from the dielectricmaterial of the sacrificial material layers 42. For example, the contactlevel dielectric layer 73 can include silicon oxide. The contact leveldielectric layer 73 can have a thickness in a range from 50 nm to 500nm, although lesser and greater thicknesses can also be used.

A photoresist layer (not shown) can be applied over the contact leveldielectric layer 73, and is lithographically patterned to form openingsin areas between clusters of memory stack structures 55. The pattern inthe photoresist layer can be transferred through the contact leveldielectric layer 73, the alternating stack (32, 42) and/or the steppeddielectric material portion 65 using an anisotropic etch to formbackside trenches 79, which vertically extend from the top surface ofthe contact level dielectric layer 73 at least to the top surface of thesubstrate semiconductor material layer 10, and laterally extend throughthe memory array region 100 and the staircase region 300.

In one embodiment, the backside trenches 79 can laterally extend along afirst horizontal direction hd1 and can be laterally spaced apart onefrom another along a second horizontal direction hd2 that isperpendicular to the first horizontal direction hd1. The memory stackstructures 55 can be arranged in rows that extend along the firsthorizontal direction hd1. The drain select level isolation structures 72can laterally extend along the first horizontal direction hd1. Eachbackside trench 79 can have a uniform width that is invariant along thelengthwise direction (i.e., along the first horizontal direction hd1).Each drain select level isolation structure 72 can have a uniformvertical cross-sectional profile along vertical planes that areperpendicular to the first horizontal direction hd1 that is invariantwith translation along the first horizontal direction hd1. Multiple rowsof memory stack structures 55 can be located between a neighboring pairof a backside trench 79 and a drain select level isolation structure 72,or between a neighboring pair of drain select level isolation structures72. In one embodiment, the backside trenches 79 can include a sourcecontact opening in which a source contact via structure can besubsequently formed. The photoresist layer can be removed, for example,by ashing.

Referring to FIG. 8, an etchant that selectively etches the secondmaterial of the sacrificial material layers 42 with respect to the firstmaterial of the insulating layers 32 can be introduced into the backsidetrenches 79, for example, using an etch process. Backside recesses 43are formed in volumes from which the sacrificial material layers 42 areremoved. The removal of the second material of the sacrificial materiallayers 42 can be selective to the first material of the insulatinglayers 32, the material of the stepped dielectric material portion 65,the semiconductor material of the semiconductor material layer 10, andthe material of the outermost layer of the memory films 50. In oneembodiment, the sacrificial material layers 42 can include siliconnitride, and the materials of the insulating layers 32 and the steppeddielectric material portion 65 can be selected from silicon oxide anddielectric metal oxides.

The etch process that removes the second material selective to the firstmaterial and the outermost layer of the memory films 50 can be a wetetch process using a wet etch solution, or can be a gas phase (dry) etchprocess in which the etchant is introduced in a vapor phase into thebackside trenches 79. For example, if the sacrificial material layers 42include silicon nitride, the etch process can be a wet etch process inwhich the exemplary structure is immersed within a wet etch tankincluding phosphoric acid, which etches silicon nitride selective tosilicon oxide, silicon, and various other materials used in the art. Thesupport pillar structure 20, the stepped dielectric material portion 65,and the memory stack structures 55 provide structural support while thebackside recesses 43 are present within volumes previously occupied bythe sacrificial material layers 42.

Each backside recess 43 can be a laterally extending cavity having alateral dimension that is greater than the vertical extent of thecavity. In other words, the lateral dimension of each backside recess 43can be greater than the height of the backside recess 43. A plurality ofbackside recesses 43 can be formed in the volumes from which the secondmaterial of the sacrificial material layers 42 is removed. The memoryopenings in which the memory stack structures 55 are formed are hereinreferred to as front side openings or front side cavities in contrastwith the backside recesses 43. In one embodiment, the memory arrayregion 100 comprises an array of monolithic three-dimensional NANDstrings having a plurality of device levels disposed above the substratesemiconductor material layer 10. In this case, each backside recess 43can define a space for receiving a respective word line of the array ofmonolithic three-dimensional NAND strings.

Each of the plurality of backside recesses 43 can extend substantiallyparallel to the top surface of the substrate semiconductor materiallayer 10. A backside recess 43 can be vertically bounded by a topsurface of an underlying insulating layer 32 and a bottom surface of anoverlying insulating layer 32. In one embodiment, each backside recess43 can have a uniform height throughout.

Referring to FIG. 9, a backside blocking dielectric layer 44 can beoptionally formed. The backside blocking dielectric layer 44, ifpresent, comprises a dielectric material that functions as a controlgate dielectric for the control gates to be subsequently formed in thebackside recesses 43. In case the blocking dielectric layer 52 ispresent within each memory opening, the backside blocking dielectriclayer 44 is optional. In case the blocking dielectric layer 52 isomitted, the backside blocking dielectric layer 44 is present.

The backside blocking dielectric layer 44 can be formed in the backsiderecesses 43 and on a sidewall of the backside trench 79. The backsideblocking dielectric layer 44 can be formed directly on horizontalsurfaces of the insulating layers 32 and sidewalls of the memory stackstructures 55 within the backside recesses 43. In one embodiment, thebackside blocking dielectric layer 44 can be formed by a conformaldeposition process such as atomic layer deposition (ALD). The backsideblocking dielectric layer 44 can consist essentially of aluminum oxide.The thickness of the backside blocking dielectric layer 44 can be in arange from 1 nm to 15 nm, such as 2 to 6 nm, although lesser and greaterthicknesses can also be used.

At least one metallic material is deposited in the plurality of backsiderecesses 43, on the sidewalls of the at least one the backside trench79, and over the top surface of the contact level dielectric layer 73.The at least one metallic material can include a conductive metalnitride material (such as TiN, TaN, or WN) and a metallic fill material(such as W, Co, Ru, Ti, and/or Ta). Each metallic material can bedeposited by a conformal deposition method, which can be, for example,chemical vapor deposition (CVD), atomic layer deposition (ALD),electroless plating, electroplating, or a combination thereof.

A plurality of electrically conductive layers 46 can be formed in theplurality of backside recesses 43, and a continuous metallic materiallayer 46L can be formed on the sidewalls of each backside trench 79 andover the contact level dielectric layer 73. Each electrically conductivelayer 46 includes a portion of the metallic barrier layer and a portionof the metallic fill material layer that are located between avertically neighboring pair of dielectric material layers such as a pairof insulating layers 32. The continuous metallic material layer 46Lincludes a continuous portion of the metallic barrier layer and acontinuous portion of the metallic fill material layer that are locatedin the backside trenches 79 or above the contact level dielectric layer73.

Each sacrificial material layer 42 can be replaced with an electricallyconductive layer 46. A backside cavity 79′ is present in the portion ofeach backside trench 79 that is not filled with the backside blockingdielectric layer 44 and the continuous metallic material layer 46L.

Referring to FIGS. 10A and 10B, the deposited metallic material of thecontinuous electrically conductive material layer 46L is etched backfrom the sidewalls of each backside trench 79 and from above the contactlevel dielectric layer 73, for example, by an isotropic wet etch, ananisotropic dry etch, or a combination thereof. Each remaining portionof the deposited metallic material in the backside recesses 43constitutes an electrically conductive layer 46. Each electricallyconductive layer 46 can be a conductive line structure. Thus, thesacrificial material layers 42 are replaced with the electricallyconductive layers 46.

Each electrically conductive layer 46 can function as a combination of aplurality of control gate electrodes located at a same level and a wordline electrically interconnecting, i.e., electrically connecting, theplurality of control gate electrodes located at the same level. Theplurality of control gate electrodes within each electrically conductivelayer 46 are the control gate electrodes for the vertical memory devicesincluding the memory stack structures 55. In other words, eachelectrically conductive layer 46 can be a word line that functions as acommon control gate electrode for the plurality of vertical memorydevices.

In one embodiment, the removal of the continuous electrically conductivematerial layer 46L can be selective to the material of the backsideblocking dielectric layer 44. In this case, a horizontal portion of thebackside blocking dielectric layer 44 can be present at the bottom ofeach backside trench 79. In another embodiment, the removal of thecontinuous electrically conductive material layer 46L may not beselective to the material of the backside blocking dielectric layer 44or, the backside blocking dielectric layer 44 may not be used. Abackside cavity 79′ is present within each backside trench 79.

Referring to FIG. 11, a dielectric wall structure 76 can be formedwithin each backside cavity 79′ by depositing at least one dielectricmaterial in the remaining unfilled volume (i.e., the backside cavity79′) of the backside trench 79. The at least one dielectric material caninclude silicon oxide, silicon nitride, a dielectric metal oxide, anorganosilicate glass, or a combination thereof. In one embodiment, theinsulating material layer can include silicon oxide. The at least onedielectric material can be deposited, for example, by low pressurechemical vapor deposition (LPCVD) or atomic layer deposition (ALD).Optionally, the at least one dielectric material can be planarized usingthe contact level dielectric layer 73 as a stopping layer. If chemicalmechanical planarization (CMP) process is used, the contact leveldielectric layer 73 can be used as a CMP stopping layer. Each remainingcontinuous portion of the at least one conductive material in thebackside trenches 79 constitutes a dielectric wall structure 76. Thedielectric wall structures 76 can be formed between each neighboringpair of alternating stacks (32, 46) of insulating layers 32 andelectrically conductive layers.

Referring to FIGS. 12A and 12B, additional contact via structures (88,86, 8P) can be formed through the contact level dielectric layer 73, andoptionally through the stepped dielectric material portion 65. Forexample, drain contact via structures 88 can be formed through thecontact level dielectric layer 73 on each drain region 63. Word linecontact via structures 86 can be formed on the electrically conductivelayers 46 through the contact level dielectric layer 73, and through thestepped dielectric material portion 65. Pass-through via structures 8Pcan be formed through the stepped dielectric material portion 65 to thesemiconductor material layer 10.

Referring to FIGS. 13A and 13B, a via level dielectric layer 80 isformed over the contact level dielectric layer 73. Various contact viastructures (198, 196, 194) can be formed through the via leveldielectric layer 80. For example, bit line connection via structures 198can be formed on the drain contact via structures 88, word lineconnection via structures 196 can be formed on the word line contact viastructures 86, and peripheral extension via structures 194 can be formedon the pass-through via structures 8P.

A first line level dielectric layer 90 is deposited over the via leveldielectric layer 80. Various metal line structures (98, 96, 94) areformed in the first line level dielectric layer 90. The metal linestructures (98, 96, 94) are herein referred to as first line level metalinterconnect structures. The various metal line structure (98, 96, 94)include bit lines 98 that are electrically connected to a respectiveplurality of the drain contact via structures 88 (for example, throughthe bit line connection via structures 198), a word-line-connectionmetal interconnect lines 98 that are electrically connected to arespective one of the word line contact via structures 86 (for example,through a bit line connection via structure 198), and peripheral metalinterconnect lines 94 that are electrically connected to a respectiveone of the pass-through via structures 8P (for example, through aperipheral extension via structure 194).

The bit lines 98 are electrically connected to upper ends of arespective subset of the vertical semiconductor channels 60 in thememory stack structures 55 in the memory array region 100. In oneembodiment, the memory stack structures 55 are arranged in rows thatextend along the first horizontal direction hd1, and the bit lines 98laterally extend along the second horizontal direction hd2.

Referring to FIG. 14, a memory die 1000 is provided by performingadditional processing steps on the exemplary structure of FIGS. 13A and13B. Specifically, additional metal interconnect structures 168 includedin additional interconnect level dielectric layers 160 are formed. In anillustrative example, the additional interconnect level dielectriclayers 160 can include a via level dielectric layer 110, a second linelevel dielectric layer 120, a second via level dielectric layer 130, anda metallic pad structure level dielectric layer 140. The metalinterconnect structures 168 can include first metal via structures 108included in the first via level dielectric layer 110, second metal linestructures 118 included within the second line level dielectric layer120, second metal via structures 128 included in the second via leveldielectric layer 130, and first bonding structures 178 (such as metallicpad structures) included in the metallic pad structure level dielectriclayer 140. While the present disclosure is described using an example inwhich the additional interconnect level dielectric layers 160 includethe first via level dielectric layer 110, the second line leveldielectric layer 120, the second via level dielectric layer 130, and themetallic pad structure level dielectric layer 140, embodiments areexpressly contemplated herein in which the additional interconnect leveldielectric layers 160 include a different number and/or differentcombinations of dielectric material layers. The memory die 1000 includesa three-dimensional array of memory elements. Electrical connectionpaths can be provided by each combination of a first bonding structure178 and a set of metal interconnect structures {(194, 94, 108, 118,128), (196, 96, 108, 118, 128), or (198, 98, 108, 118, 128)}.

Referring to FIG. 15, a second semiconductor die can be provided, whichcan be a logic die 700 including various semiconductor devices 710. Thesemiconductor devices 710 includes a peripheral circuitry for operationof the three-dimensional memory arrays in the memory die 1000. Theperipheral circuitry can include a word line driver that drives theelectrically conductive layers 46 within the memory die 1000, a bit linedriver that drives the bit lines 98 in the memory die 1000, a word linedecoder circuitry that decodes the addresses for the electricallyconductive layers 46, a bit line decoder circuitry that decodes theaddresses for the bit lines 98, a sense amplifier circuitry that sensesthe states of memory elements within the memory stack structures 55 inthe memory die 1000, a power supply/distribution circuitry that providespower to the memory die 1000, a data buffer and/or latch, and/or anyother semiconductor circuitry that can be used to operate the array ofmemory stack structures 55 in the memory die 1000. The logic die 700 caninclude a logic-die substrate 708, which can be a semiconductorsubstrate. The logic-die substrate can include a substrate semiconductorlayer 709. The substrate semiconductor layer 709 may be a semiconductorwafer or a semiconductor material layer, and can include at least oneelemental semiconductor material (e.g., single crystal silicon wafer orlayer), at least one III-V compound semiconductor material, at least oneII-VI compound semiconductor material, at least one organicsemiconductor material, or other semiconductor materials known in theart.

Shallow trench isolation structures 720 can be formed in an upperportion of the substrate semiconductor layer 709 to provide electricalisolation for semiconductor devices of the sense amplifier circuitry.The various semiconductor devices 710 can include field effecttransistors, which include respective transistor active regions 742(i.e., source regions and drain regions), a channel 746, and a gatestructure 750. The field effect transistors may be arranged in a CMOSconfiguration. Each gate structure 750 can include, for example, a gatedielectric 752, a gate electrode 754, a dielectric gate spacer 756 and agate cap dielectric 758. For example, the semiconductor devices 710 caninclude word line drivers for electrically biasing word lines of thememory die 1000 comprising the electrically conductive layers 46.

Dielectric material layers are formed over the semiconductor devices710, which are herein referred to as logic-side dielectric layers 760.Optionally, a dielectric liner 762 (such as a silicon nitride liner) canbe formed to apply mechanical stress to the various field effecttransistors and/or to prevent diffusion of hydrogen or impurities fromthe logic-side dielectric layers 760 into the semiconductor devices 710.Logic-side metal interconnect structures 780 are included within thelogic-side dielectric layers 760. The logic-side metal interconnectstructures 780 can include various device contact via structures 782(e.g., source and drain electrodes which contact the respective sourceand drain nodes of the device or gate electrode contacts),interconnect-level metal line structures 784, interconnect-level metalvia structures 786, and second bonding structures 788 (such as metallicpad structures) that may be configured to function as bonding pads.

The logic die 700 can include a backside insulating layer 714 located onthe backside surface of the logic die substrate 708. Laterally-insulatedthrough-substrate via structures (711, 712) can be formed through thelogic die substrate 708 to provide electrical contact to various inputnodes and output nodes of the periphery circuitry. Eachlaterally-insulated through-substrate via structure (711, 712) includesa through-substrate conductive via structure 712 and a tubularinsulating liner 711 that laterally surrounds the through-substrateconductive via structure 712. Backside bonding pads 716 can be formed onsurface portions of the laterally-insulated through-substrate viastructures (711, 712). Generally, a semiconductor die is provided, whichincludes semiconductor devices 710 located on a semiconductor substrate(such as the substrate semiconductor layer 709). The second bondingstructures 788 overlie, and are electrically connected to, thesemiconductor devices 710, and laterally-insulated through-substrate viastructures (711, 712) can extend through the semiconductor substrate.

Referring to FIG. 16, the memory die 1000 and the logic die 700 arepositioned such that the second bonding structures 788 of the logic die700 face the first bonding structures 178 of the memory die 1000. In oneembodiment, the memory die 1000 and the logic die 700 can be designedsuch that the pattern of the second bonding structures 788 of the logicdie 700 is the mirror pattern of the pattern of the first bondingstructures 178 of the memory die 1000. The memory die 1000 and the logicdie 700 can be bonded to each other by metal-to-metal bonding.Alternatively, an array of solder material portions may be used to bondthe memory die 1000 and the logic die 700 through the array of soldermaterial portions (such as solder balls).

In the case of metal-to-metal bonding, facing pairs of a first bondingstructure 178 of the memory die 1000 and a second bonding structure 788of the logic die 700 can brought to direct contact with each other, andcan be subjected to an elevated temperature to induce material diffusionacross the interfaces between adjoined pairs of metallic pad structures(178, 788). The interdiffusion of the metallic material can inducebonding between each adjoined pairs of metallic pad structures (178,788). In addition, the logic-side dielectric layers 760 and theinterconnect level dielectric layers 160 can include a dielectricmaterial (such as a silicate glass material) that can be bonded to eachother. In this case, physically exposed surfaces of the logic-sidedielectric layers 760 and the interconnect level dielectric layers 160can be brought to direct contact with each other and can be subjected tothermal annealing to provide additional bonding.

In case an array of solder material portions is used to provide bondingbetween the memory die 1000 and the logic die 700, a solder materialportion (such as a solder ball) can be applied to each of the firstbonding structures 178 of the memory die 1000, and/or to each of thesecond bonding structures 788 of the logic die 700. The memory die 1000and the logic die 700 can be bonded to each other through an array ofsolder material portions by reflowing the solder material portions whileeach solder material portion is contacted by a respective pair of afirst bonding structure 178 of the memory die 1000 and a second bondingstructure 788 of the logic die 700.

Generally, a logic die 700 can be bonded to a memory die 1000. Thememory die 1000 comprises an array of memory stack structures 55, andthe logic die 700 comprises a complementary metal oxide semiconductor(CMOS) circuit that includes a peripheral circuitry electrically coupledto nodes of the array of memory stack structures 55 through a subset ofmetal interconnect structures 168 included within the memory die 1000.The memory die 1000 includes the semiconductor material layer 10, and isattached to the carrier substrate 9.

Referring to FIG. 17, the carrier substrate 9 can be removed from abovethe semiconductor material layer 10. For example, a backside grindingprocess can be performed to remove the carrier substrate 9 in case thecarrier substrate 9 includes a bulk portion of a semiconductor wafer. Incase the carrier substrate 9 includes a different material than thesemiconductor material layer 10, a suitable separation method may beused to detach the carrier substrate 9 from the semiconductor materiallayer 10. In one embodiment, the carrier substrate 9 may be attached tothe semiconductor material layer 10 through a sacrificial separationmaterial layer that is isotropically etched (for example, in a wet etchprocess) to induce separation of the carrier substrate 9 from thesemiconductor material layer 10. In one embodiment, the sacrificialseparation material layer can include silicon nitride, and removal ofthe sacrificial separation material layer can be performed by a wet etchprocess using hot phosphoric acid. A backside surface of thesemiconductor material layer 10 can be physically exposed upon removalof the carrier substrate 9.

Referring to FIGS. 18 and 19A, the semiconductor material layer 10 canbe removed. In one embodiment, removal of the semiconductor materiallayer 10 may be performed by chemical mechanical planarization (CMP)using the most distal one of the insulating layers 32 and the steppeddielectric material portion 65 as stopping structures. A distal end ofeach of the vertical semiconductor channels 60 is physically exposedupon removal of the semiconductor material layer 10. A planar surface ofa most distal one of the insulating layers 32 (i.e., the bottommostinsulating layer 32 formed directly on the semiconductor material layer10 at the processing steps of FIG. 2) within the alternating stack (32,46) is physically exposed upon removal of the semiconductor materiallayer 10. A planar surface of the stepped dielectric material portion 65is physically exposed upon removal of the semiconductor material layer10. Portions of the memory stack structures 55 that protrude through ahorizontal plane HP including the planar surface of the most distal oneof the insulating layers 32 are removed during the CMP process.

Referring to FIG. 19B, physically exposed surfaces of the dielectriccores 62 can be vertically recessed selective to the semiconductormaterial of the vertical semiconductor channels 60. An isotropic etchprocess that etches the material of the dielectric cores 62 selective tothe semiconductor material of the vertical semiconductor channels 60 canbe performed to vertically recess the dielectric cores 62. For example,a wet etch using dilute hydrofluoric acid can be used to verticallyrecess the distal planar surfaces of the dielectric cores 62 selectiveto the annular distal surfaces of the vertical semiconductor channels 60that are located within the horizontal plane HP that includes theannular distal surfaces of the vertical semiconductor channels 60.Vertical recessing of the dielectric cores 62 increases the area of thephysically exposed surfaces of the vertical semiconductor channels 60,thereby lowering contact resistance between the vertical semiconductorchannels 60 and a source layer to be subsequently formed thereupon. Inone embodiment, the dielectric cores 62 can include a dielectricmaterial having a greater etch rate than the dielectric material of theinsulating layers 32. For example, the dielectric cores 62 can includeborosilicate glass, borophosphosilicate glass, or organosilicate glass,and the insulating layers 32 can include densified undoped silicateglass. In one embodiment, the physically exposed surface of theinsulating layer 32 (which is most distal from the interface between thememory die 1000 and the logic die 700, and is most proximal to a sourcelayer to be subsequently formed) may be collaterally recessed duringrecessing of the physically exposed planar surfaces of the dielectriccores 62. Distal surfaces of the pass-through via structures 8P can bephysically exposed.

Referring to FIGS. 19C and 20, a doped semiconductor material layer 18Lcan be deposited directly on the physically exposed surfaces of thevertical semiconductor channels 60, the planar surface of the physicallyexposed one of the insulating layers 32, and on the physically exposedplanar surface of the stepped dielectric material portion 65. The dopedsemiconductor material layer 18L can include a conductive semiconductormaterial (i.e., a heavily doped semiconductor material) having a dopingof the second conductivity type, i.e., the opposite of the firstconductivity type. Thus, the doped semiconductor material layer 18L caninclude a doped semiconductor material having a conductivity greaterthan 1.0×10⁵ S/cm. The thickness of the doped semiconductor materiallayer 18L can be in a range from 100 nm to 1,000 nm, although lesser andgreater thicknesses can also be used. Vertically protruding portions 18Pof the doped semiconductor material layer 18L vertically protrude acrossthe horizontal plane including the annular top surfaces of the verticalsemiconductor channels 60 toward a respective one of the dielectriccores 62, and contacts the respective one of the dielectric cores 62.

Referring to FIG. 21, the doped semiconductor material layer 18L can bepatterned into a source layer 18, for example, by a combination oflithographic methods and an etch process. A lithographically patternedphotoresist layer can cover only the portion of the doped semiconductormaterial layer 18L located within the memory array region. An etchprocess can be used to remove portions of the doped semiconductormaterial layer 18L that are not covered by the patterned photoresistlayer. The photoresist layer can be removed, for example, by ashing. Thesource layer 18 is formed directly on the distal end of each of thevertical semiconductor channels 60 within the memory opening fillstructures 58, and does not contact any of the vertical semiconductorchannels 60 within the support pillar structures 20. The lateral extentof the source layer 18 can be confined within the areas of the memoryregions 100. The source layer 18 includes a doped semiconductor materialhaving a conductivity greater than 1.0×10⁵ S/cm. Optionally, adielectric passivation layer (not shown) may be formed over thealternating stack (32, 46), the stepped dielectric material portion 65,and the source layer 18.

Various bonding pads (14, 16) can be formed on the source layer 18 andthe pass-through via structures 8P. The bonding pads (14, 16) caninclude at least one source bonding pad 14 formed directly on the backside of the source layer 18, and backside bonding pads 16 formeddirectly on distal surfaces of the pass-through via structures 8P.Bonding wires 15 can be bonded to a respective one of the bonding pads(14, 16). A backside bonding wire 715 can be bonded to each backsidebonding pad 716.

FIGS. 22A-22C illustrate an alternative configuration for a memoryopening fill structure during formation of a source layer 18, which maybe used in lieu of the processing steps of FIGS. 19A-19C, 20, and 21.

Referring to FIG. 22A, the semiconductor material layer 10 can beremoved by a recess etch process, which can include a wet etch processor a dry etch process. In this case, removal of the semiconductormaterial layer 10 can be selective to the materials of the insulatinglayers 32, the stepped dielectric material portion 65, and the memoryfilms 50. For example, a wet etch process using KOH or NaOH can be usedto remove the semiconductor material layer 10. A distal planar surfaceof an insulating layer 32 of the alternating stack (32, 46), a planardistal surface of the stepped dielectric material portion 65, and distalouter surfaces of the memory films 50 can be physically exposed uponremoval of the semiconductor material layer 10. The memory films 50 canfunction as etch stop material portions during removal of thesemiconductor material layer 10. In one embodiment, the verticalsemiconductor channels 60 can be covered by cap portions of the memoryfilms 50 at the distal side of the bonded assembly over the physicallyexposed surface of the most distal one of the insulating layers 32. Thememory films 50 may be substantially intact, or may be partiallydamaged, for example, by thinning of the outer layer(s) (such as theblocking dielectric layers 52 and/or the charge storage layers 54).

Referring to FIG. 22B, a series of isotropic etch processes can beperformed to remove the physically exposed portions of the memory films50. A surface of a distal portion of each vertical semiconductor channel60 can be physically exposed after the series of isotropic etchprocesses. An outer sidewall of each vertical semiconductor channel 60can vertically protrude outward from the horizontal plane including thephysically exposed surface of an insulating layer 32.

Referring to FIG. 22C, the processing steps of FIGS. 19C, 20, and 21 canbe performed to form a source layer 18 that contacts outer sidewalls ofthe vertical semiconductor channels within the memory opening fillstructures 58.

Referring to all drawings and referring to various embodiments of thepresent disclosure, a three-dimensional memory device comprises a memorydie 1000 bonded to a logic die 700 is provided. The memory die 1000comprises: an alternating stack of insulating layers 32 and electricallyconductive layers 46; memory stack structures 55 extending through thealternating stack (32, 46), wherein each of the memory stack structures55 comprises a respective vertical semiconductor channel 60 and arespective memory film 50; drain regions 63 located at a first end(e.g., a proximal end) of a respective one of the vertical semiconductorchannels 60; a source layer 18 having a first surface (e.g., the bottomsurface facing the vertical semiconductor channels 60 and the logic die700 shown in FIG. 21) and a second surface (e.g., top surface) oppositeto the first surface. The first surface is located at a second end(e.g., a distal end) of each of the vertical semiconductor channels 60.The first end (e.g., proximal end) of each of the vertical semiconductorchannels 60 is closer to the logic die 700 than the second end (e.g.,distal end) of each of the vertical semiconductor channels 60. Asemiconductor wafer 9, such as silicon wafer is not located over thesecond surface (e.g., top surface in FIG. 21) of the source layer 18. Inother words, carrier substrate 9 (e.g., silicon wafer or any other typeof substrate) on which the vertical semiconductor channels 60 wereoriginally grown is not present over the source layer 18.

In one embodiment, the source layer 18 and the drain regions 63 comprisea respective doped semiconductor material having a conductivity greaterthan 1.0×10⁵ S/cm and having a doping of a same conductivity type (suchas the second conductivity type, e.g., n-type).

In one embodiment, the first surface of the source layer 18 contacts aplanar surface of a most proximal one of the insulating layers 32 (i.e.,the most distal insulating layer 32 from the interface between thememory die 1000 and the logic die 700) within the alternating stack (32,46).

In one embodiment, the alternating stack (32, 46) comprises steppedsurfaces that continuously extend from the most proximal one of theinsulating layers 32 within the alternating stack to a most distal oneof the insulating layers 32 that is most distal from the source layer 18of all insulating layers of the alternating stack (32, 46); and thememory die 1000 comprises a stepped dielectric material portion 65contacting the stepped surfaces and having a stepwise-increasing lateralextent LE (shown in FIG. 21) that increases with a vertical distance VDfrom a horizontal plane HP including an interface between the sourcelayer 18 and the most proximal one of the insulating layers 32.

In one embodiment, the memory die 1000 comprises support pillarstructures 20 that vertically extend through a region of the alternatingstack (32, 46) that underlie or overlie the stepped surfaces and aregion of the stepped dielectric material portion 65 that overlie orunderlie the stepped surfaces; and each of the support pillar structures20 comprises a first semiconductor material portion (i.e., the verticalsemiconductor channels 60 within the support pillar structure 20) havinga same composition as the vertical semiconductor channels 60 (of thememory opening fill structures 58), a second semiconductor materialportion (i.e., the drain regions 63 within the support pillar structure20) having a same composition as the drain regions 63 (of the memoryopening fill structures 58), and a dielectric layer stack (i.e., thememory film 50 within the support pillar structures 20) containing asame set of dielectric material layers as each of the memory films 50(within the memory opening fill structures 58).

In one embodiment, each of the memory stack structures 55 and thesupport pillar structures 20 includes a respective horizontal surfacethat is located entirely within the horizontal plane including ahorizontal interface between the source layer 18 and the verticalsemiconductor channels 60; and the memory stack structures and thesupport pillar structures do not extend through the horizontal planeincluding the horizontal interface between the source layer and thevertical semiconductor channels 60.

In one embodiment, the source layer 18 does not contact any of thesupport pillar structures 20; and the source layer 18 comprisesvertically protruding portions 18P that protrude through the horizontalplane including the horizontal interface between the source layer 18 andthe vertical semiconductor channels 60, and contacts sidewalls of thevertical semiconductor channels 60.

In one embodiment, the three-dimensional memory device comprises: abonding pad 14 contacting the second surface of the source layer 18;pass-through via structures 8P that vertically extend through thestepped dielectric material portion 65; and additional bonding pads 16contacting a respective one of the pass-through via structures 8P.

In one embodiment, a horizontal surface of the stepped dielectricmaterial portion 65 is located within the horizontal plane including theinterface between the source layer 18 and the most proximal one of theinsulating layers 32, the additional bonding pads 16 contact arespective annular portion of the horizontal surface of the steppeddielectric material portion 65; and the bonding pad 14 that contacts thesource layer 18 is vertically offset from the additional bonding pads bya thickness of the source layer 18.

In one embodiment, the three-dimensional memory device comprises: abonding wire 15 bonded to the boding pad 14 that contacts the sourcelayer 18; and additional bonding wires 15 bonded to a respective one ofthe additional bonding pads 16.

In one embodiment, the memory die 1000 comprises first bondingstructures 178 that are more distal from a horizontal plane includinginterfaces between the source layer 18 and the vertical semiconductorchannels 60 than the drain regions 63 are from the horizontal plane; thelogic die 700 contains second bonding structures 788; and the secondbonding structures 788 are bonded to the first bonding structures 178.

In one embodiment, the memory die 1000 comprises a two-dimensional arrayof vertical NAND strings that form a three-dimensional array of memoryelements; and the logic die 700 includes a peripheral circuitry thatsupport operation of the three-dimensional array of memory elements.

In one embodiment, the three-dimensional memory device comprises:laterally-insulated through-substrate via structures (711, 712) thatvertically extend through a substrate 709 of the logic die 700 and areelectrically connected to a respective node of peripheral circuitrysemiconductor devices 710 located on the logic die 700; and backsidebonding pads 716 contacting a respective one of the laterally-insulatedthrough-substrate via structures (711, 712) and vertically spaced fromthe semiconductor devices 710 by the substrate 709 of the logic die 700.

The source layer 18 according to various embodiments of the presentdisclosure provides electrical contact to each distal end of thevertical semiconductor channels 60 without using any replacement ofmaterials through narrow trenches. Further, the source layer 18 cancontact inner sidewalls or outer sidewalls of the distal ends of thevertical semiconductor channels 60, thereby providing low contactresistance between the vertical semiconductor channels 60 and the sourcelayer 18. Thus, reduction in process complexity and enhancement ofelectrical contact between the vertical semiconductor channels 60 andthe source layer 18 can be achieved by the methods and structures ofvarious embodiments of the present disclosure.

FIGS. 23A-23O are sequential vertical cross-sectional view of a firstalternative configuration of a bonded assembly (700, 1000) duringvarious processing steps up to formation of backside bonding pads 16according to a second embodiment of the present disclosure.

Referring to FIG. 23A, a portion of a bonded assembly (700, 1000) isillustrated at a processing step that corresponds to the processing stepof FIG. 18. The first alternative configuration of the bonded assembly(700, 1000) illustrated in FIG. 23A can be derived from the bondedassembly (700, 1000) of FIG. 18 by modifying the memory die 1000.Specifically, the memory die 1000 can be modified to add a verticalstack of a sacrificial silicon oxide liner 102 and a sacrificial siliconnitride liner 104 between the semiconductor material layer 10 and thealternating stack of insulating layers 32 and electrically conductivelayers 46. Specifically, the sacrificial silicon oxide liner 102 can beformed directly on the top surface of the semiconductor material layer10 of FIG. 1, and the sacrificial silicon nitride liner 104 can beformed directly on the top surface of the sacrificial silicon oxideliner 102. The alternating stack of insulating layers 32 and sacrificialmaterial layers 42 illustrated in FIG. 2 can be formed on a top surfaceof the sacrificial silicon nitride liner 104. The thickness of thesacrificial silicon oxide liner 102 can be in a range from 3 nm to 60nm, such as from 6 nm to 30 nm. The thickness of the sacrificial siliconnitride liner 104 can be in a range from 3 nm to 60 nm, such as from 6nm to 30 nm. While the present disclosure is described employing anembodiment in which a sacrificial silicon oxide liner 102 and asacrificial silicon nitride liner 104 are present, embodiments areexpressly contemplated in which the sacrificial silicon oxide liner 102and/or the sacrificial silicon nitride liner 104 are omitted.

Generally, a memory die 1000 includes a carrier substrate 9. The carriersubstrate 9 may be a commercially available semiconductor substrate(such as a silicon wafer) on which a semiconductor material layer 10 isprovided. The semiconductor material layer 10 may be formed on thecarrier substrate 9, or may be an upper portion of the carrier substrate9 in case the carrier substrate 9 is a semiconductor substrate. Thememory die 1000 comprises memory stack structures 55 that verticallyextend through an alternating stack of insulating layers 32 andelectrically conductive layers 46, a dielectric material portion 65 thatcontacts sidewalls of the alternating stack (32 46), and a pass-throughvia structure 8P that vertically extends through the dielectric materialportion 65. Each of the memory stack structures 55 comprises arespective vertical semiconductor channel 60 and a respective memoryfilm 50. In one embodiment, the pass-through via structure 8P can have avertical extent that is greater than the vertical thickness of thealternating stack (32, 46), and can vertically extend through thedielectric material portion 65. The memory die 1000 can comprise firstbonding structures 178 electrically connected to the memory stackstructures 55 and the electrically conductive layers 46.

A logic die 700 comprising semiconductor devices 710 and second bondingstructures 788 is provided. The second bonding structures 788 areelectrically connected to the semiconductor devices 710. In oneembodiment, the semiconductor devices 710 in the logic die 700 comprisesa peripheral circuitry configured to operate memory elements in thememory stack structures 55 and to drive the electrically conductivelayers 46. The logic die 700 can be attached to the memory die 1000 bybonding the second bonding structures 788 to the first bondingstructures 178 while the carrier substrate 9 is attached to the memorydie 1000. A semiconductor structure (i.e., a bonded assembly) isprovided, which comprises the memory die 1000 bonded to the logic die700. The carrier substrate 9 can be detached from the memory die 1000after the logic die 700 is attached to the memory die 1000.

Subsequently, the semiconductor material layer 10 can be removedselective to the material of the sacrificial silicon oxide liner 102.For example, a wet etch process employing a KOH solution, a hottrimethyl-2 hydroxyethyl ammonium hydroxide (“hot TMY”) solution, and/ora tetramethyl ammonium hydroxide (TMAH) solution may be employed toremove the semiconductor material layer 10 selective to the sacrificialsilicon oxide liner 102 in case the semiconductor material layer 10includes silicon. The structure illustrated in FIG. 23A can be thusprovided. In this case, removal of the semiconductor material layer 10can be selective to the dielectric materials of the memory films 50.Thus, portions of the memory films 50 that are embedded in thesemiconductor material layer 10 prior to removal of the semiconductormaterial layer 10 are not removed by the etch process that removes thesemiconductor material layer.

In some embodiments, end portions of the dielectric wall structures 76can be embedded in the semiconductor material layer 10 prior to removalof the semiconductor material layer 10. The etch process that removesthe semiconductor material layer 10 can be selective to the dielectricwall structures 76.

The pass-through via structures 8P can include pad-connectionpass-through via structures 8P1 that are employed to provide electricalconnection to bonding pads to be subsequently formed. Further, thepass-through via structures 8P can include source-connectionpass-through via structures 8P2 that are employed to provide electricalconnection to a buried source layer to be subsequently formed. Each ofthe pad-connection pass-through via structures 8P1 and thesource-connection pass-through via structures 8P2 can include a metallicbarrier layer 82 including a conductive metallic barrier material (suchas TiN, TaN, and/or WN, or a combination of a TiN layer and a titaniumlayer) and a conductive via fill material portion 84 including aconductive via fill material (such as W, Cu, Mo, Ru, Co, and/or aheavily doped semiconductor material). A distal end of each pass-throughvia structure 8P can be physically exposed after removing the carriersubstrate 9 and the semiconductor material layer 10. As used herein, anend of a structure that is proximal to a bonding interface between thememory die 1000 and the logic die 700 is referred to as a proximal end,and an end of a structure that is distal from the bonding interfacebetween the memory die 1000 and the logic die 700 is referred to as adistal end.

Referring to FIG. 23B, the sacrificial silicon oxide liner 102 can beremoved by performing an isotropic etch employing dilute hydrofluoricacid. In case the outermost layer of each memory film 50 includes ablocking dielectric layer 52 containing silicon oxide, the portion ofeach blocking dielectric layer 52 that protrudes from the physicallyexposed surface of the sacrificial silicon nitride liner 104 can becollaterally etched during removal of the sacrificial silicon oxideliner 102.

Referring to FIG. 23C, the sacrificial silicon nitride liner 104 can beremoved by performing an isotropic etch employing hot phosphoric acid.In case the charge storage layer 54 of each memory film 50 includessilicon nitride, the portion of each charge storage layer 54 thatprotrudes from the physically exposed surface planar surface of aninsulating layer 32 (which is most distal from the bonding interfacebetween the memory die 1000 and the logic die 700) can be collaterallyetched during removal of the sacrificial silicon nitride liner 104.Subsequently, an additional selective etch process (e.g., chemical dryetch, “CDE”) can be performed to isotropically etch the physicallyexposed portions of the tunneling dielectric layers 56. Thus, physicallyexposed portions of the memory films 50 are removed, and outer sidewallsof the vertical semiconductor channels 60 are physically exposed. Adistal end of each of the vertical semiconductor channels 60 isphysically exposed.

After physical exposure of the distal surfaces of the verticalsemiconductor channels 60, the distal surfaces of the memory films 50may be located within the horizontal plane including the physicallyexposed horizontal surface of the most distal insulating layer 32 of thealternating stack of the insulating layers 32 and the electricallyconductive layers 46, or may be recessed toward the bonding interfacebetween the memory die 1000 and the logic die 700 relative to thephysically exposed horizontal surface of the most distal insulatinglayer 32 of the alternating stack (32, 46). The recess depth may be in arange from 0 nm to 60 nm, such as from 0 nm to 30 nm.

Referring to FIG. 23D, dopants of the second conductivity type can beoptionally implanted into physically exposed portions of the verticalsemiconductor channels 60 by performing an ion implantation process(represented by “I/I”). The physically exposed region of the distalportion of each vertical semiconductor channel 60 can be converted intoa doped semiconductor region having a doping of the second conductivitytype, which is herein referred to as a source cap region 606. A p-njunction can be formed at each interface between a source cap region 606and an adjoining vertical semiconductor channel 60.

Referring to FIG. 23E, a first conductive material can be deposited onthe physically exposed surfaces of the distal side (i.e., the backside)of the memory die 1000. For example, a continuous doped semiconductormaterial layer 218L can be deposited on the physically exposed surfacesof the source cap regions 606, the pad-connection pass-through viastructures 8P1, and the source-connection pass-through via structures8P2. The continuous doped semiconductor material layer 218L has a dopingof the second conductivity type, which is the same conductivity type asthe conductivity type of the source cap regions 606. In one embodiment,the continuous doped semiconductor material layer 218L can include dopedpolysilicon including dopants of the second conductivity type at anatomic concentration in a range from 1.0×10¹⁹/cm³ to 2.0×10²¹/cm³,although lesser and greater dopant concentrations can also be employed.The thickness of the continuous doped semiconductor material layer 218Lover a planar surface of the dielectric material portion 65 may be in arange from 50 nm to 600 nm, such as from 100 nm to 300 nm, althoughlesser and greater thicknesses can also be employed.

In one embodiment, the continuous doped semiconductor material layer218L may be formed by depositing an amorphous silicon layer. Theamorphous silicon layer may be doped in-situ during deposition, or itmay be undoped as deposited and then doped by ion implantation afterdeposition. The amorphous silicon layer is converted to a polysiliconlayer after deposition by crystallization using any suitablecrystallization annealing process, such as laser annealing, flash lampannealing, sufficiently long forming gas ambient annealing, spikeannealing, etc. In another embodiment, the continuous dopedsemiconductor material layer 218L may be formed by depositing apolysilicon layer. The polysilicon layer may be doped in-situ duringdeposition, or it may be undoped as deposited and then doped by ionimplantation after deposition. If the continuous doped semiconductormaterial layer 218L is doped by ion implantation, then the implantedions may be activated by any suitable dopant activation annealingprocess, such as laser annealing, flash lamp annealing, sufficientlylong forming gas ambient annealing, spike annealing, etc.

Referring to FIG. 23F, a photoresist layer (not shown) can be appliedover the continuous doped semiconductor material layer 218L, and can belithographically patterned to cover multiple discrete areas. In oneembodiment, the photoresist layer can continuously cover each set ofmemory opening fill structures 58 and a respective one of thesource-connection pass-through via structures 8P2 configured toelectrically bias the vertical semiconductor channels 60 within the setof memory opening fill structures 58. In one embodiment, the photoresistlayer does not cover the pad-connection pass-through via structures 8P1or the dielectric wall structures 76.

An etch process can be performed employing the photoresist layer as anetch mask layer. The etch process may include an anisotropic etchprocess or an isotropic etch process. The etch process etches unmaskedportions of the continuous doped semiconductor material layer 218L. Thepatterned portions of the continuous doped semiconductor material layer218L include at least one doped semiconductor material layer 218. Eachdoped semiconductor material layer 218 functions as a source layer thatelectrically connects a respective set of source cap regions 606 to arespective source-connection pass-through via structures 8P2.Alternatively, in case the processing steps of FIG. 23D are notperformed and the source cap regions 606 are not formed, each dopedsemiconductor material layer 218 functions as a source layer thatelectrically connects a respective set of distal end portions of thevertical semiconductor channels 60 to a respective source-connectionpass-through via structures 8P2. Generally, a source layer comprisingthe doped semiconductor material layer 218 can be formed by depositing adoped semiconductor material on the distal end of each of the verticalsemiconductor channels 60 and by patterning the doped semiconductormaterial.

Generally, a source layer, such as the doped semiconductor materiallayer 218, comprising a first conductive material that is formeddirectly on the semiconductor material of the distal end of each of thevertical semiconductor channels 60, which may comprise the source capregions 606 upon implantation of dopants of the second conductivitytype. The first conductive material can be patterned to form a firstconductive material layer, such as the doped semiconductor materiallayer 218, contacting the semiconductor material of the distal end ofeach of the vertical semiconductor channels 60. The verticalsemiconductor channels 60 can comprise a semiconductor material having adoping of a first conductivity type, and the first conductive materialcan comprise a doped semiconductor material having a doping of a secondconductivity type that is an opposite of the first conductivity type.

In one embodiment, interfaces between the semiconductor material of thevertical semiconductor channels 60 and the source layer (comprising thedoped semiconductor material layer 218) protrude from the horizontalplane including the horizontal interface between the source layer andthe alternating stack (32, 46) along a vertical direction that pointsaway from the interface between the logic die 700 and the memory die1000. For example, the interfaces between the source cap regions 606 andthe source layer (comprising the doped semiconductor material layer 218)can be more distal from the bonding interface between the logic die 700and the memory die 1000 than the horizontal plane including thehorizontal interface between the source layer and the alternating stack(32, 46).

The source layer (comprising the doped semiconductor material layer 218)is electrically connected to end portions of the vertical semiconductorchannels 60 that are distal from an interface between the logic die 700and the memory die 1000. If the source cap regions 606 are omitted, thenthe source layer (comprising the doped semiconductor material layer 218)contacts end portions of the vertical semiconductor channels 60 that aredistal from an interface between the logic die 700 and the memory die1000. If the source cap regions 606 are present, then the source layer(comprising the doped semiconductor material layer 218) is electricallyconnected to end portions of the vertical semiconductor channels 60 thatare distal from an interface between the logic die 700 and the memorydie 1000 through the source cap regions 606.

In one embodiment, distal surfaces of the memory films 50 are locatedwithin a horizontal plane including the horizontal interface between thesource layer (comprising the doped semiconductor material layer 218) andthe alternating stack of the insulating layers 32 and the electricallyconductive layers 46, or are more proximal to the interface between thelogic die 700 and the memory die 1000 than the interface between thesource layer and the alternating stack (32, 46) is to the interfacebetween the logic die 700 and the memory die 1000.

Referring to FIG. 23G, a backside isolation dielectric layer 230 can beformed over the first conductive material layer (i.e., the source layercomprising the doped semiconductor material layer 218) and over thepass-through via structures 8P (which include the pad-connectionpass-through via structures 8P1). For example, the backside isolationdielectric layer 230 can be formed on the distal surface of the dopedsemiconductor material layer 218 and on the planar distal surface of thedielectric material portion 65. In one embodiment, the backsideisolation dielectric layer 230 can include a dielectric material such asundoped silicate glass (e.g., silicon oxide) or a doped silicate glass,and can have a thickness in a range from 100 nm to 2,000 nm, such asfrom 200 nm to 1,000 nm, although lesser and greater thicknesses canalso be employed.

Referring to FIG. 23H, a photoresist layer 237 can be applied over thedistal surface of the backside isolation dielectric layer 230, and canbe lithographically patterned to form a pattern of discrete openings inareas that overlie the pad-connection pass-through via structures 8P1.In one embodiment, the pad-connection pass-through via structures 8P1can be arranged as a periodic array of pad-connection pass-through viastructures 8P1. The openings in the photoresist layer can overlie arespective subset of the pad-connection pass-through via structures 8P1that are to be subsequently connected to a same bonding pad. In otherwords, a plurality of pad-connection pass-through via structures 8P1 maybe employed to provide an electrically conductive path to a bonding pad.Alternatively, a single pad-connection pass-through via structure 8P1may be employed to provide an electrically conductive path to a bondingpad.

Referring to FIG. 23I, an etch process can be performed to removeunmasked portions of the backside isolation dielectric layer 230. Ananisotropic etch process or an isotropic etch process can be performed.The etch process can be selective to the materials of the pad-connectionpass-through via structures 8P1. An opening can be formed through thebackside isolation dielectric layer 230, and a distal surface of eachpad-connection pass-through via structure 8P1 is physically exposed.Distal portions of the pad-connection pass-through via structures 8P1protrude from the horizontal physically exposed surface of thedielectric material portion 65.

Referring to FIG. 23J, a second conductive material can be deposited onthe distal surface of the pad-connection pass-through via structures 8P1through the opening in the backside isolation dielectric layer 230. Inone embodiment, the second conductive material can comprise at least onemetallic material. In this case, the at least one metallic material canbe deposited over the backside isolation dielectric layer 230 and intothe openings through the backside isolation dielectric layer 230. The atleast one metallic material can include, for example, a pad barrierliner layer 342L including a metallic nitride material such as TiN, TaN,and/or WN and a continuous metallic material layer 344L including ametallic pad material such as copper, aluminum or alloy thereof. Thethickness of the pad barrier liner layer 342L may be in a range from 10nm to 100 nm, and the thickness of the continuous metallic materiallayer 344L may be in a range from 300 nm to 3,000 nm, although lesserand greater thicknesses can also be employed.

Referring to FIG. 23K, the second conductive material can be patternedby a combination of lithographic patterning process and an etch process.For example, a photoresist layer 247 can be applied over the continuousmetallic material layer 344L, and can be lithographically patterned tocover each area of the openings in the backside isolation dielectriclayer 230. The photoresist layer 247 can be patterned into discretephotoresist material portions that cover the area of a respective one ofthe openings through the backside isolation dielectric layer 230.

Referring to FIG. 23L, an etch process can be performed to transfer thepattern of the photoresist layer 247 through the continuous metallicmaterial layer 344L and the pad barrier liner layer 342L. The etchprocess may include an anisotropic etch process (such as a reactive ionetch process) or an isotropic etch process (such as a wet etch process).Unmasked portions of the continuous metallic material layer 344L and thepad barrier liner layer 342L are removed by the etch process. In oneembodiment, a first portion of the second conductive material (which cancomprise a metallic material) that overlies the source layer (comprisingthe doped semiconductor material layer 218) can be removed withoutremoving a second portion of the second conductive material from abovethe pad-connection pass-through via structures 8P1.

Each remaining portion of the second conductive material contacting apad-connection pass-through via structure 8P1 comprises a connection pad340. Each connection pad 340 can comprise a remaining second portion ofthe second conductive material (which may comprise a metallic material).For example, each contiguous set of remaining material portions from thecontinuous metallic material layer 344L and the pad barrier liner layer342L after the etch process comprises a connection pad 340. Eachconnection pad 340 can include a pad barrier liner 342 (which is apatterned portion of the pad barrier liner layer 342L) and a pad metalportion 344 (which is patterned portion of the continuous metallicmaterial layer 344L). The pad metal portion 344 comprises at least onemetallic material portion such as a copper, aluminum or copper-aluminumalloy portion.

Generally, a connection pad 340 comprising the second conductivematerial that is different from the first conductive material of thesource layer (comprising the doped semiconductor material layer 218) canbe formed directly on a pad-connection pass-through via structure 8P1and the dielectric material portion 65. The connection pad 340 iselectrically isolated from the source layer (comprising the dopedsemiconductor material layer 218).

Each connection pad 340 can be formed on the distal end of a respectivepass-through via structure 8P such as a respective pad-connectionpass-through via structure 8P1. A distal portion of each pad-connectionpass-through via structure 8P1 protrudes from a horizontal planeincluding a horizontal interface between a connection pad 340 and thedielectric material portion 65 along a vertical direction that pointsaway from the interface between the logic die 700 and the memory die1000, and contacts recessed surfaces of the connection pad 340. Eachpad-connection pass-through via structure 8P1 comprises a metallicbarrier layer 82 comprising a metallic nitride material and a metallicfill material portion 84 embedded in the metallic barrier layer 82, notcontacting the connection pad 340, and spaced from the connection pad340 by a cap portion of the metallic barrier layer 82 that is containedwithin the distal portion of the pad-connection pass-through viastructure 8P1.

Referring to FIG. 23M, a backside passivation dielectric layer 250 canbe formed over the backside isolation dielectric layer 230 and theconnection pads 340. The backside passivation dielectric layer 250includes a dielectric material that can passivate the backside of thememory die 1000, i.e., a dielectric material that can function as adiffusion blocking layer that blocks diffusion of moisture andimpurities. In one embodiment, the backside passivation dielectric layer250 can include silicon nitride that is deposited by plasma-enhancedchemical vapor deposition (PECVD), or a bilayer of silicon oxide andsilicon nitride. The thickness of the backside passivation dielectriclayer 250 can be in a range from 100 nm to 1,000 nm, although lesser andgreater thicknesses can also be employed.

Referring to FIG. 23N, a backside polymer dielectric layer 260 can beformed over the backside passivation dielectric layer 250. Generally,the backside polymer dielectric layer 260 can be a dielectric polymerlayer. For example, the backside polymer dielectric layer 260 can beformed by spin-coating and curing photosensitive polyimide. Thephotosensitive polyimide can be lithographically exposed and developedto form openings over the areas of the connection pads 340. Ananisotropic etch process that employs the backside polymer dielectriclayer 260 as an etch mask can be performed to etch through unmaskedportions of the backside passivation dielectric layer 250. Theconnection pads 340 may be employed as etch stop structures. Terminalvia (TV) cavities 269 can be formed through the backside polymerdielectric layer 260 and the backside passivation dielectric layer 250.Additional terminal via cavities (not shown) may be formed to physicallyexpose a source layer (such as the doped semiconductor material layer218).

Referring to FIG. 23O, an optional bonding pad 16 is formed in the TVcavity 269 between the bonding wire 15 and the connection pad 340. Thebonding pad may be formed by depositing a metallic liner material suchas TiN, TaN, and/or WN in the terminal via cavities 269, andsubsequently depositing at least one bonding pad material into the TVcavities 269. The at least one bonding pad material may include, forexample, a pad metal such as copper or aluminum, and an under bumpmetallurgy (UBM) material stack for facilitating subsequent attachmentof a solder material thereupon. For example, the at least one bondingpad material may include a vertical stack of a copper portion and anunder bump metallurgy (UBM) stack portion, or a vertical stack of analuminum portion and a UBM stack portion. An exemplary UBM stack portioncan include, from bottom to top, a Ti/Cu, layer, a Ni layer, and a Culayer. The at least one bonding pad material and the metallic linermaterial can be subsequently patterned, for example, by applying andpatterning a photoresist layer thereabove, and by transferring thepattern in the photoresist layer through the at least one bonding padmaterial and the metallic liner material. Various bonding pads 16 can beformed directly on a respective one of the connection pads 340.Additional bonding pads, such as at least one source bonding pad 14illustrated in FIG. 21, may be formed directly on the distal surface ofa source layer (such as the doped semiconductor material layer 218).Bonding wires 15 can be bonded to a respective one of the bonding pads(14, 16) as illustrated in FIG. 21. A backside bonding wire 715 can bebonded to each backside bonding pad 716.

Generally, at least one backside dielectric layer (230, 250, 260) can beformed over the source layer (such as the doped semiconductor materiallayer 218). Each backside bonding pad 16 can be formed over a distalsurface of the at least one backside dielectric layer (230, 250, 260).Each backside bonding pad 16 can comprise a via portion that extendsthrough the at least one backside dielectric layer (230, 250, 260). Theat least one backside dielectric layer (230, 250, 260) can include abackside polymer dielectric layer 260 that contacts the metallicmaterial portion of a connection pad 340, and extends over the sourcelayer (such as the doped semiconductor material layer 218). In oneembodiment, the at least one backside dielectric layer (230, 250, 260)can comprise a stack of a silicon oxide layer (such as the backsideisolation dielectric layer 230), a silicon nitride layer (such as thebackside passivation dielectric layer 250), and a dielectric polymerlayer (such as the backside polymer dielectric layer 260). At least asubset of the backside bonding pads 16 can be formed through the atleast one backside dielectric layer (230, 250, 260) on a distal surfaceof a respective connection pad 340.

At least one backside bonding pad 16 can be electrically connected to apass-through via structure 8P, and can be electrically isolated from thesource layer (such as the doped semiconductor material layer 218). Theat least one backside bonding pad 16 can be formed over the dielectricmaterial portion 65, and can have an areal overlap with the dielectricmaterial portion 65 in a plan view. Each connection pad 340 can contacta distal surface of a respective pass-through via structure 8P (such asa respective pad-connection pass-through via structure 8P1), and cancontact a proximal surface of a respective backside bonding pad 16.

A source layer (comprising the doped semiconductor material layer 218)comprises a first conductive material, and is electrically connected toend portions of the vertical semiconductor channels 60 that are distalfrom an interface between the logic die 700 and the memory die 1000. Apass-through via structure (such as a pad-connection pass-through viastructure 8P1) has a vertical extent that is greater than a verticalthickness of the alternating stack (32, 46), and vertically extendsthrough the dielectric material portion 65. A connection pad 340comprises a second conductive material that is different from the firstconductive material, contacts a distal surface of the pass-through viastructure, and is electrically isolated from the source layer.

In one embodiment, the vertical semiconductor channels 60 comprise asemiconductor material having a doping of a first conductivity type, andthe source layer (comprising the doped semiconductor material layer 218)comprises a doped semiconductor material having a doping of a secondconductivity type that is an opposite of the first conductivity type. Inone embodiment, source cap regions 606 including a doped semiconductormaterial portion having a doping of the second conductivity type can belocated directly on an end portion of a respective one of the verticalsemiconductor channels 60. The source layer contacts each of the sourcecap regions 606.

In one embodiment, the second conductive material can comprise ametallic material. In one embodiment, the connection pad 340 cancomprise a pad barrier liner 342 comprising a metallic barrier materialand contacting a distal horizontal surface of the dielectric materialportion 65, and a pad metal portion 344 comprising the metallic materialand contacting the pad barrier liner 342. In one embodiment, thepass-through via structure (such as a pad-connection pass-through viastructure 8P1) comprises a metallic barrier layer 82 in contact with thepad barrier liner 342 and a sidewall of the dielectric material portion65, and a metallic fill material portion 84 that is spaced from theconnection pad 340 and from the dielectric material portion 65 by themetallic barrier layer 82. In one embodiment, a distal portion of themetallic barrier layer 82 protrudes from a horizontal interface betweenthe dielectric material portion 65 and the connection pad 340 and intothe connection pad 340, and is laterally surrounded by the connectionpad 340. A backside bonding pad 16 can be located over the dielectricmaterial portion 65, can contact a distal surface of the connection pad340, and can be electrically isolated from the source layer (comprisingthe doped semiconductor material layer 218).

Referring to FIG. 23P, another embodiment of the first alternativeconfiguration of the bonded assembly is illustrated, which can bederived from the bonded assembly of FIG. 23O by omitting the ionimplantation process that forms the source cap regions 606. In thiscase, the doped semiconductor material layer 218 directly contacts endportions of the vertical semiconductor channels 60. The dopedsemiconductor material layer 218 is a source layer that functions as acommon source for all vertical NAND strings including the verticalsemiconductor channels 60.

Referring to FIG. 23Q, another embodiment of the first alternativeconfiguration of the bonded assembly is illustrated, which can bederived from the bonded assembly of FIG. 23O by omitting the bonding pad16. In this embodiment, the bonding wire 15 is deposited into the TVcavity 269 to directly physically contact the connection pad 340.

FIGS. 24A-24I are sequential vertical cross-sectional view of a secondalternative configuration of a bonded assembly (700, 1000) duringvarious processing steps up to formation of backside bonding pads 16according to a third embodiment of the present disclosure.

Referring to FIG. 24A, the second alternative configuration of thebonded assembly (700, 1000) can the same as the first alternativeconfiguration of the bonded assembly (700, 1000) illustrated in FIG.23G.

Referring to FIG. 24B, a photoresist layer 237 can be applied over thedistal surface of the backside isolation dielectric layer 230, and canbe lithographically patterned to remove the photoresist material fromabove the areas of the doped semiconductor material layer 218 and fromabove the areas of around the pad-connection pass-through via structures8P1. The patterned portions of the photoresist layer 237 can overlieportions of the backside isolation dielectric layer 230 located around,or between, the doped semiconductor material layer 218 and do notoverlie areas in which connection pads are to be subsequently formed. Inone embodiment, the pad-connection pass-through via structures 8P1 canbe arranged as a periodic array of pad-connection pass-through viastructures 8P1. In this case, the openings in the photoresist layer canoverlie a respective subset of the pad-connection pass-through viastructures 8P1 that are to be subsequently connected to a same bondingpad. In other words, a plurality of pad-connection pass-through viastructures 8P1 may be employed to provide an electrically conductivepath to a bonding pad. Alternatively, a single pad-connectionpass-through via structure 8P1 may be employed to provide anelectrically conductive path to a bonding pad.

Referring to FIG. 24C, an etch process can be performed to removeunmasked portions of the backside isolation dielectric layer 230. Ananisotropic etch process or an isotropic etch process can be performed.The etch process can be selective to the materials of the pad-connectionpass-through via structures 8P1. An opening is formed through thebackside isolation dielectric layer 230 such that a distal surface ofeach pad-connection pass-through via structure 8P1 is physicallyexposed. A distal surface (i.e., a backside surface) of a first materiallayer (such as the doped semiconductor material layer 218) can bephysically exposed after patterning the backside isolation dielectriclayer 230.

Distal portions of the pad-connection pass-through via structures 8P1protrude from the horizontal physically exposed surface of thedielectric material portion 65. Remaining portions of the backsideisolation dielectric layer 230 cover gaps between portions of the dopedsemiconductor material layer 218. The combination of the dopedsemiconductor material layer 218 and the backside isolation dielectriclayer 230 covers the entire backside surface of the memory die 1000other than the areas in which connection pads are to be subsequentlyformed, which include areas in which the pad-connection pass-through viastructures 8P1 are located.

Referring to FIG. 24D, a second conductive material, such as at leastone metallic material, can be deposited over the backside isolationdielectric layer 230 and into the openings through the backsideisolation dielectric layer 230. The second conductive material caninclude, for example, a metallic barrier liner layer 442L including ametallic nitride material such as TiN, TaN, and/or WN or a Ti/TiNbilayer, and a continuous metallic material layer 444L including ametallic material such as copper, aluminum or alloy thereof. Thethickness of the metallic barrier liner layer 442L may be in a rangefrom 10 nm to 100 nm, and the thickness of the continuous metallicmaterial layer 444L may be in a range from 300 nm to 3,000 nm, althoughlesser and greater thicknesses can also be employed. The metallicbarrier liner layer 442L can be deposited directly on the distal surfaceof the doped semiconductor material layer 218 and directly on theprotruding surfaces of the metallic barrier layer 82 of thepad-connection pass-through via structures 8P1.

Referring to FIG. 24E, a photoresist layer 247 can be applied over thecontinuous metallic material layer 444L, and can be lithographicallypatterned to cover each area of the openings in the backside isolationdielectric layer 230. Thus, the patterned photoresist layer 247 coversthe areas of the doped semiconductor material layer 218, the areas ofpad-connection pass-through via structures 8P1, and the areas around thepad-connection pass-through via structures 8P1 in which the metallicbarrier liner layer 442L contacts the dielectric material portion 65.The patterned portions of the photoresist layer 247 include discretephotoresist material portions that cover a respective area in which arespective connection pad is to be subsequently formed.

Referring to FIG. 24F, an etch process can be performed to transfer thepattern of the photoresist layer 247 through the continuous metallicmaterial layer 444L and the metallic barrier liner layer 442L. The etchprocess may include an anisotropic etch process (such as a reactive ionetch process) and/or an isotropic etch process (such as a wet etchprocess). Unmasked portions of the continuous metallic material layer444L and the metallic barrier liner layer 442L are removed by the etchprocess. The second conductive material, which can include the at leastone metallic material, can be patterned to provide a first portion ofthe at least one metallic material that overlies the source layer(comprising the doped semiconductor material layer 218) and a secondportion of the at least one metallic material located over thepad-connection pass-through via structures 8P1. The portion of the atleast one metallic material can be incorporated into the source layer.

Each contiguous set of remaining material portions from the continuousmetallic material layer 444L and the metallic barrier liner layer 442Lthat overlie, and are electrically connected to, a respective set of atleast one pad-connection pass-through via structure 8P1 after the etchprocess comprises a connection pad 340. Each connection pad 340 caninclude a pad barrier liner 342 (which is a patterned portion of the padbarrier liner layer 442L) and a pad metal portion 344 (which ispatterned portion of the continuous metallic material layer 444L). Thepad metal portion 344 comprises at least one metallic material portionsuch as a copper, aluminum or alloy thereof portion.

Each contiguous set of remaining material portions from the continuousmetallic material layer 444L and the metallic barrier liner layer 442Lthat overlie, and are electrically connected to, a doped semiconductormaterial layer 218 after the etch process comprises a metallic sourcelayer 440. Each metallic source layer 440 can include a source barrierliner 442 (which is a patterned portion of the metallic barrier linerlayer 442L) and a metallic material layer 444 (which is patternedportion of the continuous metallic material layer 444L). The metallicmaterial layer 444 comprises at least one metallic material portion suchas a copper, aluminum or alloy thereof portion.

Each connection pad 340 can be formed on the distal end of a respectivepass-through via structure 8P such as a respective pad-connectionpass-through via structure 8P1. A distal portion of each pad-connectionpass-through via structure 8P1 protrudes from a horizontal planeincluding a horizontal interface between a connection pad 340 and thedielectric material portion 65 along a vertical direction that pointsaway from the interface between the logic die 700 and the memory die1000, and contacts recessed surfaces of the connection pad 340. Eachpad-connection pass-through via structure 8P1 comprises a metallicbarrier layer 82 comprising a metallic nitride material and a metallicfill material portion 84 embedded in the metallic barrier layer 82, notcontacting the connection pad 340, and spaced from the connection pad340 by a cap portion of the metallic barrier layer 82 that is containedwithin the distal portion of the pad-connection pass-through viastructure 8P1.

Referring to FIG. 24G, a backside passivation dielectric layer 250 canbe formed over the backside isolation dielectric layer 230, theconnection pads 340, and the metallic source layer 440. The backsidepassivation dielectric layer 250 includes a dielectric material that canpassivate the backside of the memory die 1000, i.e., a dielectricmaterial that can function as a diffusion blocking layer that blocksdiffusion of moisture and impurities. In one embodiment, the backsidepassivation dielectric layer 250 can include silicon nitride that isdeposited by plasma-enhanced chemical vapor deposition (PECVD) or asilicon oxide/silicon nitride bilayer. The thickness of the backsidepassivation dielectric layer 250 can be in a range from 100 nm to 1,000nm, although lesser and greater thicknesses can also be employed.

Referring to FIG. 24H, a backside polymer dielectric layer 260 can beformed over the backside passivation dielectric layer 250. Generally,the backside polymer dielectric layer 260 can be a dielectric polymerlayer. For example, the backside polymer dielectric layer 260 can beformed by spin-coating and curing photosensitive polyimide. Thephotosensitive polyimide can be lithographically exposed and developedto form openings over the areas of the connection pads 340. Ananisotropic etch process that employs the backside polymer dielectriclayer 260 as an etch mask can be performed to etch through unmaskedportions of the backside passivation dielectric layer 250. Theconnection pads 340 may be employed as etch stop structures. Terminalvia (TV) cavities 269 can be formed through the backside polymerdielectric layer 260 and the backside passivation dielectric layer 250.Additional terminal via cavities (not shown) may be formed to physicallyexpose a source layer (such as the metallic source layer 440).

Referring to FIG. 24I, a metallic liner material such as TiN, TaN,and/or WN can be deposited in the terminal via cavities 269, and atleast one bonding pad material can be subsequently deposited. The atleast one bonding pad material may include, for example, a pad metalsuch as copper, aluminum or alloy thereof, and an under bump metallurgy(UBM) material stack for facilitating subsequent attachment of a soldermaterial thereupon. For example, the at least one bonding pad materialmay include a vertical stack of a copper portion and an under bumpmetallurgy (UBM) stack portion, or a vertical stack of an aluminumportion and a UBM stack portion. An exemplary UBM stack portion caninclude, from bottom to top, a Ti/Cu, layer, a Ni layer, and a Cu layer.

The at least one bonding pad material and the metallic liner materialcan be subsequently patterned, for example, by applying and patterning aphotoresist layer thereabove, and by transferring the pattern in thephotoresist layer through the at least one bonding pad material and themetallic liner material. Various bonding pads 16 can be formed directlyon a respective one of the connection pads 340. Additional bonding pads,such as at least one source bonding pad 14 illustrated in FIG. 21, maybe formed directly on the distal surface of a source layer (such as thedoped semiconductor material layer 218). Bonding wires 15 can be bondedto a respective one of the bonding pads (14, 16) as illustrated in FIG.21. A backside bonding wire 715 can be bonded to each backside bondingpad 716. Alternatively, the bonding pad 16 may be omitted, and thebonding wire 15 is deposited into the TV cavity 269 to directlyphysically contact the connection pad 340, similar to the configurationshown in FIG. 23Q.

Generally, at least one backside dielectric layer (230, 250, 260) can beformed over the source layer (such as the doped semiconductor materiallayer 218 and the metallic source layer 240). Each backside bonding pad16 can be formed over a distal surface of the at least one backsidedielectric layer (230, 250, 260). Each backside bonding pad 16 cancomprise a via portion that extends through the at least one backsidedielectric layer (230, 250, 260). The at least one backside dielectriclayer (230, 250, 260) can include a backside polymer dielectric layer260 that contacts the metallic material portion of a connection pad 340,and extends over the source layer (such as the doped semiconductormaterial layer 218). In one embodiment, the at least one backsidedielectric layer (230, 250, 260) can comprise a stack of a silicon oxidelayer (such as the backside isolation dielectric layer 230), a siliconnitride layer (such as the backside passivation dielectric layer 250),and a dielectric polymer layer (such as the backside polymer dielectriclayer 260). At least a subset of the backside bonding pads 16 can beformed through the at least one backside dielectric layer (230, 250,260) on a distal surface of a respective connection pad 340.

At least one backside bonding pad 16 can be electrically connected to apass-through via structure 8P, and can be electrically isolated from thesource layer (such as the doped semiconductor material layer 218). Theat least one backside bonding pad 16 can be formed over the dielectricmaterial portion 65, and can have an areal overlap with the dielectricmaterial portion 65 in a plan view. Each connection pad 340 can contacta distal surface of a respective pass-through via structure 8P (such asa respective pad-connection pass-through via structure 8P1), and cancontact a proximal surface of a respective backside bonding pad 16.

In one embodiment, a source layer (218, 440) can comprise a firstconductive material (comprising the doped semiconductor material layer218) and can be electrically connected to end portions of the verticalsemiconductor channels 60 that are distal from an interface between thelogic die 700 and the memory die 1000. A pass-through via structure(such as a pad-connection pass-through via structure 8P1) can have avertical extent that is greater than a vertical thickness of thealternating stack (32, 46), and can vertically extend through thedielectric material portion 65. The source layer (218, 440) can furthercomprise a metallic source layer 440 including a second conductivematerial, which can comprise at least one metallic material. The secondconductive material is different from the first conductive material. Aconnection pad 340 can comprise the second conductive material, and cancontact a distal surface of the pass-through via structure (such as apad-connection pass-through via structure 8P1), and can be electricallyisolated from the source layer (218, 440).

In one embodiment, the vertical semiconductor channels 60 comprise asemiconductor material having a doping of a first conductivity type, andthe source layer (comprising the doped semiconductor material layer 218)comprises a doped semiconductor material having a doping of a secondconductivity type that is an opposite of the first conductivity type. Inone embodiment, source cap regions 606 including a doped semiconductormaterial portion having a doping of the second conductivity type can belocated directly on an end portion of a respective one of the verticalsemiconductor channels 60. The source layer (218, 440) contacts each ofthe source cap regions 606.

In one embodiment, the second conductive material can comprise ametallic material. In one embodiment, the connection pad 340 cancomprise a pad barrier liner 342 comprising a metallic barrier materialand contacting a distal horizontal surface of the dielectric materialportion 65, and a pad metal portion 344 comprising the metallic materialand contacting the pad barrier liner 342. In one embodiment, thepass-through via structure (such as a pad-connection pass-through viastructure 8P1) comprises a metallic barrier layer 82 in contact with thepad barrier liner 342 and a sidewall of the dielectric material portion65, and a metallic fill material portion 84 that is spaced from theconnection pad 340 and from the dielectric material portion 65 by themetallic barrier layer 82. In one embodiment, a distal portion of themetallic barrier layer 82 protrudes from a horizontal interface betweenthe dielectric material portion 65 and the connection pad 340 and intothe connection pad 340, and is laterally surrounded by the connectionpad 340. A backside bonding pad 16 can be located over the dielectricmaterial portion 65, can contact a distal surface of the connection pad340, and can be electrically isolated from the source layer (comprisingthe doped semiconductor material layer 218).

Referring to FIG. 24J, another embodiment of the second alternativeconfiguration of the bonded assembly is illustrated, which can bederived from the bonded assembly of FIG. 24I by omitting the ionimplantation process that forms the source cap regions 606. In thiscase, the doped semiconductor material layer 218 directly contacts endportions of the vertical semiconductor channels 60. The dopedsemiconductor material layer 218 is part of the source layer thatfunctions as a common source for all vertical NAND strings including thevertical semiconductor channels 60.

FIGS. 25A-25G are sequential vertical cross-sectional view of a thirdalternative configuration of a bonded assembly (700, 1000) duringvarious processing steps up to formation of backside bonding pads 16according to a fourth embodiment of the present disclosure.

Referring to FIG. 25A, the second alternative configuration of a bondedassembly (700, 1000) can be the same as the first alternativeconfiguration of the bonded assembly at the processing steps of FIG.23C. A distal end of each of the vertical semiconductor channels 60 anda distal end of each pass-through via structure 8P are physicallyexposed.

Referring to FIG. 25B, at least one conductive material can besimultaneously directly on the material of the distal end of each of thevertical semiconductor channels 60 and directly on the distal end ofeach pass-through via structure 8P. For example, the at least oneconductive material comprises a layer stack including a metallic barrierliner layer 242L and a continuous metallic material layer 244L. In thiscase, the metallic barrier liner layer 242L and the continuous metallicmaterial layer 244L can be deposited over the physically exposedsurfaces of the vertical semiconductor channels 60 and the pass-throughvia structures 8P. The metallic barrier liner layer 242L includes ametallic barrier material such as TiN, TaN, and/or WN, or a Ti/TiNbilayer. The metallic barrier liner layer 242L can be deposited byphysical vapor deposition or chemical vapor deposition, and can have athickness in a range from 3 nm to 60 nm, such as from 6 nm to 30 nm,although lesser and greater thicknesses can also be employed. Thecontinuous metallic material layer 244L includes an elemental metal oran intermetallic alloy such as Al, Cu, W, Mo, Ru, Co, and/or alloysthereof. The continuous metallic material layer 244L can be deposited byphysical vapor deposition and/or by electroplating, and can have athickness in a range from 200 nm to 1,000 nm, although lesser andgreater thicknesses can also be employed.

Referring to FIG. 25C, the at least one conductive material can bepatterned into multiple discrete portions. For example, a photoresistlayer (not shown) can be applied over the continuous metallic materiallayer 244L, and can be lithographically patterned to cover multiplediscrete areas. In one embodiment, a patterned portion of thephotoresist layer can continuously cover a set of memory opening fillstructures 58 and a respective one of the source-connection pass-throughvia structures 8P2 configured to electrically bias the verticalsemiconductor channels 60 within the set of memory opening fillstructures 58. In one embodiment, the patterned photoresist layerincludes discrete photoresist material portions that cover a respectivesubset of the pad-connection pass-through via structures 8P1.

An etch process can be performed employing the photoresist layer as anetch mask layer. The etch process may include an anisotropic etchprocess or an isotropic etch process. A source layer comprising a firstportion of the at least one conductive material is formed on the distalend of each of the vertical semiconductor channels 60. A connection pad340 comprising a second portion of the at least one conductive materialis formed on a pass-through via structure (such as a pad-connectionpass-through via structure 8P1). The connection pad 340 is electricallyisolated from the source layer.

Specifically, the etch process etches unmasked portions of thecontinuous metallic material layer 244L and the metallic barrier linerlayer 242L. The patterned portions of the continuous metallic materiallayer 244L include at least one metallic material layer 244 that coversa respective set of memory opening fill structures 58 and continuouslyextends over at least one source-connection pass-through via structure8P2, and a pad metal portion 344 that covers at least one thepad-connection pass-through via structure 8P1. The patterned portion ofthe metallic barrier liner layer 242L includes at least one sourcebarrier liner 242 that contacts a respective set of memory opening fillstructures 58 and at least one source-connection pass-through viastructure 8P2, and a pad barrier liner 342 that contacts at least onepad-connection pass-through via structure 8P1. Each contiguouscombination of a metallic material layer 244 and a source barrier liner242 constitutes a metallic source layer 240. Each contiguous combinationof a pad metal portion 344 and a pad barrier liner 342 constitutes aconnection pad 340. The metallic source layer 240 functions as a sourcelayer that electrically connects a respective set of verticalsemiconductor channels 60 to the at least one source-connectionpass-through via structure 8P2.

Generally, a source layer comprising a metallic source layer 240 can beformed by depositing at least one metallic material on the distal end ofeach of the vertical semiconductor channels 60 and by patterning the atleast one metallic material. In one embodiment, interfaces between thesemiconductor material of the vertical semiconductor channels 60 and thesource layer (comprising the metallic source layer 240) protrude fromthe horizontal plane including the horizontal interface between thesource layer and the alternating stack (32, 46) along a verticaldirection that points away from the interface between the logic die 700and the memory die 1000. For example, the interfaces between thevertical semiconductor channels 60 and the source layer (comprising themetallic source layer 240) can be more distal from the bonding interfacebetween the logic die 700 and the memory die 1000 than the horizontalplane including the horizontal interface between the source layer andthe alternating stack (32, 46).

The source layer (comprising the metallic source layer 240) iselectrically connected to and contacts end portions of the verticalsemiconductor channels 60 that are distal from an interface between thelogic die 700 and the memory die 1000. In one embodiment, distalsurfaces of the memory films 50 are located within a horizontal planeincluding the horizontal interface between the source layer (comprisingthe metallic source layer 240) and the alternating stack of theinsulating layers 32 and the electrically conductive layers 46, or aremore proximal to the interface between the logic die 700 and the memorydie 1000 than the interface between the source layer and the alternatingstack (32, 46) is to the interface between the logic die 700 and thememory die 1000.

Referring to FIG. 25D, a backside isolation dielectric layer 230 can beformed on the distal surface of the metallic source layer 240, on thedistal surface of each connection pad 340, and on the planar distalsurface of the dielectric material portion 65. In one embodiment, thebackside isolation dielectric layer 230 can include a dielectricmaterial such as undoped silicate glass or a doped silicate glass, andcan have a thickness in a range from 100 nm to 2,000 nm, such as from200 nm to 1,000 nm, although lesser and greater thicknesses can also beemployed.

Referring to FIG. 25E, a backside passivation dielectric layer 250 canbe formed over the backside isolation dielectric layer 230. The backsidepassivation dielectric layer 250 includes a dielectric material that canpassivate the backside of the memory die 1000, i.e., a dielectricmaterial that can function as a diffusion blocking layer that blocksdiffusion of moisture and impurities. In one embodiment, the backsidepassivation dielectric layer 250 can include silicon nitride that isdeposited by plasma-enhanced chemical vapor deposition (PECVD) or asilicon oxide/silicon nitride bilayer. The thickness of the backsidepassivation dielectric layer 250 can be in a range from 100 nm to 1,000nm, although lesser and greater thicknesses can also be employed.

Referring to FIG. 25F, a backside polymer dielectric layer 260 can beformed over the backside passivation dielectric layer 250. Generally,the backside polymer dielectric layer 260 can be a dielectric polymerlayer. For example, the backside polymer dielectric layer 260 can beformed by spin-coating and curing photosensitive polyimide. Thephotosensitive polyimide can be lithographically exposed and developedto form openings over the areas of the connection pads 340. Ananisotropic etch process that employs the backside polymer dielectriclayer 260 as an etch mask can be performed to etch through unmaskedportions of the backside passivation dielectric layer 250 and thebackside isolation dielectric layer 230. The connection pads 340 may beemployed as etch stop structures. Terminal via (TV) cavities 269 can beformed through the backside polymer dielectric layer 260 and thebackside passivation dielectric layer 250. Additional terminal viacavities (not shown) may be formed to physically expose a source layer(such as the metallic source layer 240).

Referring to FIG. 25G, a metallic liner material such as TiN, TaN,and/or WN can be deposited in the terminal via cavities 269, and atleast one bonding pad material can be subsequently deposited. The atleast one bonding pad material may include, for example, a pad metalsuch as copper, aluminum or alloy thereof, and an under bump metallurgy(UBM) material stack for facilitating subsequent attachment of a soldermaterial thereupon. For example, the at least one bonding pad materialmay include a vertical stack of a copper portion and an under bumpmetallurgy (UBM) stack portion, or a vertical stack of an aluminumportion and a UBM stack portion. An exemplary UBM stack portion caninclude, from bottom to top, a Ti/Cu, layer, a Ni layer, and a Cu layer.

The at least one bonding pad material and the metallic liner materialcan be subsequently patterned, for example, by applying and patterning aphotoresist layer thereabove, and by transferring the pattern in thephotoresist layer through the at least one bonding pad material and themetallic liner material. Various bonding pads 16 can be formed directlyon a respective one of the connection pads 340. Additional bonding pads,such as at least one source bonding pad 14 illustrated in FIG. 21, maybe formed directly on the distal surface of a source layer (such as themetallic source layer 240). Bonding wires 15 can be bonded to arespective one of the bonding pads (14, 16) as illustrated in FIG. 21. Abackside bonding wire 715 can be bonded to each backside bonding pad716. Alternatively, the bonding pad 16 may be omitted, and the bondingwire 15 is deposited into the TV cavity 269 to directly physicallycontact the connection pad 340, similar to the configuration shown inFIG. 23Q.

Generally, at least one backside dielectric layer (230, 250, 260) can beformed over the source layer (such as the metallic source layer 240).Each backside bonding pad 16 can be formed over a distal surface of theat least one backside dielectric layer (230, 250, 260). Each backsidebonding pad 16 can comprise a via portion that extends through the atleast one backside dielectric layer (230, 250, 260). The at least onebackside dielectric layer (230, 250, 260) can include a backside polymerdielectric layer 260 that contacts the metallic material portion of aconnection pad 340, and extends over the source layer (such as themetallic source layer 240). In one embodiment, the at least one backsidedielectric layer (230, 250, 260) can comprise a stack of a silicon oxidelayer (such as the backside isolation dielectric layer 230), a siliconnitride layer (such as the backside passivation dielectric layer 250),and a dielectric polymer layer (such as the backside polymer dielectriclayer 260). At least a subset of the backside bonding pads 16 can beformed through the at least one backside dielectric layer (230, 250,260) on a distal surface of a respective connection pad 340.

At least one backside bonding pad 16 can be electrically connected to apass-through via structure 8P, and can be electrically isolated from thesource layer (such as the metallic source layer 240). The at least onebackside bonding pad 16 can be formed over the dielectric materialportion 65, and can have an areal overlap with the dielectric materialportion 65 in a plan view. Each connection pad 340 can contact a distalsurface of a respective pass-through via structure 8P (such as arespective pad-connection pass-through via structure 8P1), and cancontact a proximal surface of a respective backside bonding pad 16.

In one embodiment, a source layer (comprising the metallic source layer240) comprises a first portion of a conductive material, and iselectrically connected to end portions of the vertical semiconductorchannels 60 that are distal from an interface between the logic die 700and the memory die 1000. A pass-through via structure (such as apad-connection pass-through via structure 8P1) has a vertical extentthat is greater than a vertical thickness of the alternating stack (32,46), and vertically extends through the dielectric material portion 65.A connection pad comprises a second portion of the conductive material,contacts a distal surface of the pass-through via structure such as thepad-connection pass-through via structure 8P1), and is electricallyisolated from the source layer (comprising the metallic source layer240).

In one embodiment, the conductive material comprises a metallicmaterial. In one embodiment, the source layer (comprising the metallicsource layer 240) contacts a distal horizontal surface of thealternating stack (32, 46), and the connection pad 340 contacts a distalhorizontal surface of the dielectric material portion 65. In oneembodiment, the source layer (comprising the metallic source layer 240)comprises a layer stack of a source barrier liner 242 contacting thedistal horizontal surface of the alternating stack (32, 46) and ametallic material layer 244 comprising the first portion of the metallicmaterial and overlying the source barrier liner 242. The connection pad340 comprises a layer stack of a pad barrier liner 342 contacting thedistal horizontal surface of the dielectric material portion 65 and apad metal portion 344 comprising the second portion of the metallicmaterial. In one embodiment, source barrier liner 242 and the padbarrier liner 342 have a same material composition and a same thickness.

FIGS. 26A-26G are sequential vertical cross-sectional view of a fourthalternative configuration of a bonded assembly during various processingsteps up to formation of backside bonding pads according to a fifthembodiment of the present disclosure.

Referring to FIG. 26A, the fourth alternative configuration of thebonded assembly (700, 1000) can the same as the first alternativeconfiguration of the bonded assembly (700, 1000) illustrated in FIG.23E. In this case, dopants of the second conductivity type can beoptionally implanted into the material of the distal end of each of thevertical semiconductor channels 60 to form source cap regions 606 havinga doping of the second conductivity type. Generally, a conductivematerial can be simultaneously directly on the material of the distalend of each of the vertical semiconductor channels (which may includethe source cap regions 606 if the source cap regions 606 are formed, ormay include end portions of the vertical semiconductor channels 60) anddirectly on the distal end of the pass-through via structures 8P. Inthis case, the vertical semiconductor channels 60 comprise asemiconductor material having a doping of a first conductivity type, andthe conductive material comprises a continuous doped semiconductormaterial layer 218L having a doping of a second conductivity type thatis an opposite of the first conductivity type.

Referring to FIG. 26B, at least one metallic material can be depositedon the distal surface of the continuous doped semiconductor materiallayer 218L. For example, a layer stack including a metallic barrierliner layer 442L and a continuous metallic material layer 444L directlyon a distal surface of the continuous doped semiconductor material layer219L. The at least one metallic material can include, for example, ametallic barrier liner layer 442L including a metallic nitride materialsuch as TiN, TaN, and/or WN, or a Ti/TiN bilayer and a continuousmetallic material layer 444L including a metallic material such ascopper, aluminum or alloy thereof. The thickness of the metallic barrierliner layer 442L may be in a range from 10 nm to 100 nm, and thethickness of the continuous metallic material layer 444L may be in arange from 300 nm to 3,000 nm, although lesser and greater thicknessescan also be employed. The metallic barrier liner layer 442L does notdirectly contact the pad-connection pass-through via structures 8P1 orthe source cap regions 606 (or the vertical semiconductor channels 60).

Referring to FIG. 26C, a photoresist layer (not shown) can be appliedover the continuous metallic material layer 444L, and can belithographically patterned to form openings in areas outside of thememory opening fill structures 58, the source-connection pass-throughvia structures 8P2, and the pad-connection pass-through via structure8P1. Patterned portions of the photoresist layer include a continuousphotoresist material portion that extends over the areas of the memoryopening fill structures 58 and the source-connection pass-through viastructures 8P2, and discrete photoresist material portions that cover arespective set of at least one pad-connection pass-through via structure8P1.

An etch process can be performed to transfer the pattern in thephotoresist layer though the stack of the continuous metallic materiallayer 444L, the metallic barrier liner layer 442L, and the continuousdoped semiconductor material layer 218L. The etch process may include ananisotropic etch process (such as a reactive ion etch process) or anisotropic etch process (such as a wet etch process). Unmasked portionsof the continuous metallic material layer 444L, the metallic barrierliner layer 442L, and the continuous doped semiconductor material layer218L are removed by the etch process.

Generally, the layer stack of the metallic barrier liner layer 442L andthe continuous metallic material layer 444L and the underlyingconductive material of the continuous doped semiconductor material layer218L can be patterned employing a same etch mask. A source layer (218,440) is formed, which comprises a first remaining portion of the layerstack (442L, 444L) and a first remaining portion of the continuous dopedsemiconductor material layer 218L. A connection pad (238, 640) isformed, which comprises a second remaining portion of the layer stack(442L, 444L) and a second remaining portion of the continuous dopedsemiconductor material layer 218L. Generally, the layer stack (442L,444L) and the continuous doped semiconductor material layer 218L can bepatterned into multiple discrete portions. The source layer (218, 440)can be formed on the distal end of each of the vertical semiconductorchannels 60. The connection pad (238, 640) can be formed on apass-through via structure (such as a pad-connection pass-through viastructure 8P1), and can be electrically isolated from the source layer(218, 440).

Specifically, a patterned portion of the continuous doped semiconductormaterial layer 218L that contacts and/or is electrically connected to,distal ends of the vertical semiconductor channels 60 and thesource-connection pass-through via structures 8P2 comprises a dopedsemiconductor material layer 218, which is a semiconductor source layer.Each contiguous set of remaining material portions from the continuousmetallic material layer 444L and the metallic barrier liner layer 442Lthat overlie, and are electrically connected to a doped semiconductormaterial layer 218 after the etch process comprises a metallic sourcelayer 440. Each metallic source layer 440 can include a source barrierliner 442 (which is a patterned portion of the metallic barrier linerlayer 442L) and a metallic material layer 444 (which is patternedportion of the continuous metallic material layer 444L). The metallicmaterial layer 444 comprises at least one metallic material portion suchas a copper, aluminum or alloy thereof portion. The stack of the dopedsemiconductor material layer 218 and the metallic source layer 440constitutes a source layer (218, 440).

Each patterned portion of the continuous doped semiconductor materiallayer 218L that contacts a respective set of at least one pad-connectionpass-through via structure 8P1 comprises a semiconductor connection pad238. Each contiguous set of remaining material portions from thecontinuous metallic material layer 444L and the metallic barrier linerlayer 442L that overlie, and are electrically connected to a respectiveset of at least one pad-connection pass-through via structure 8P1through a respective semiconductor connection pad 238 after the etchprocess comprises a metallic connection pad 640. Each metallicconnection pad 640 can include a pad barrier liner 642 (which is apatterned portion of the metallic barrier liner layer 442L) and a padmetal portion 644 (which is patterned portion of the continuous metallicmaterial layer 444L). The pad metal portion 644 comprises at least onemetallic material portion such as a copper, aluminum or alloy thereofportion. Each vertical stack of a semiconductor connection pad 238 and ametallic connection pad 640 constitutes a composite connection pad (238,640). In one embodiment, sidewalls of each semiconductor connection pad238 can be vertically coincident with sidewalls of an overlying metallicconnection pad 640.

Each composite connection pad (238, 640) is a connection pad that isformed on the distal end of a respective pass-through via structure 8Psuch as a respective pad-connection pass-through via structure 8P1. Adistal portion of each pad-connection pass-through via structure 8P1protrudes from a horizontal plane including a horizontal interfacebetween a connection pad 640 and the dielectric material portion 65along a vertical direction that points away from the interface betweenthe logic die 700 and the memory die 1000, and contacts recessedsurfaces of the composite connection pad (238, 640). Each pad-connectionpass-through via structure 8P1 comprises a metallic barrier layer 82comprising a metallic nitride material and a metallic fill materialportion 84 embedded in the metallic barrier layer 82, not contacting thecomposite connection pad (238, 640), and spaced from the compositeconnection pad (238, 640) by a cap portion of the metallic barrier layer82 that is contained within the distal portion of the pad-connectionpass-through via structure 8P1.

Referring to FIG. 26D, a backside isolation dielectric layer 230 can beformed on the distal surface of the metallic source layer, on the distalsurfaces of the composite connection pads (238, 640), and on physicallyexposed distal surface of the dielectric material portion 65. In oneembodiment, the backside isolation dielectric layer 230 can include adielectric material such as undoped silicate glass or a doped silicateglass, and can have a thickness in a range from 100 nm to 2,000 nm, suchas from 200 nm to 1,000 nm, although lesser and greater thicknesses canalso be employed.

Referring to FIG. 26E, a backside passivation dielectric layer 250 canbe formed over the backside isolation dielectric layer 230. The backsidepassivation dielectric layer 250 includes a dielectric material that canpassivate the backside of the memory die 1000, i.e., a dielectricmaterial that can function as a diffusion blocking layer that blocksdiffusion of moisture and impurities. In one embodiment, the backsidepassivation dielectric layer 250 can include silicon nitride that isdeposited by plasma-enhanced chemical vapor deposition (PECVD) or asilicon oxide/silicon nitride bilayer. The thickness of the backsidepassivation dielectric layer 250 can be in a range from 100 nm to 1,000nm, although lesser and greater thicknesses can also be employed.

Referring to FIG. 26F, a backside polymer dielectric layer 260 can beformed over the backside passivation dielectric layer 250. Generally,the backside polymer dielectric layer 260 can be a dielectric polymerlayer. For example, the backside polymer dielectric layer 260 can beformed by spin-coating and curing photosensitive polyimide. Thephotosensitive polyimide can be lithographically exposed and developedto form openings over the areas of the connection pads 640. Ananisotropic etch process that employs the backside polymer dielectriclayer 260 as an etch mask can be performed to etch through unmaskedportions of the backside passivation dielectric layer 250 and thebackside isolation dielectric layer 230. The connection pads 640 may beemployed as etch stop structures. Terminal via (TV) cavities 269 can beformed through the backside polymer dielectric layer 260, the backsidepassivation dielectric layer 250, and the backside isolation dielectriclayer 230. Additional terminal via cavities (not shown) may be formed tophysically expose a source layer (such as the metallic source layer440).

Referring to FIG. 26G, a metallic liner material such as TiN, TaN,and/or WN can be deposited in the terminal via cavities 269, and atleast one bonding pad material can be subsequently deposited. The atleast one bonding pad material may include, for example, a pad metalsuch as copper, aluminum or alloy thereof, and an under bump metallurgy(UBM) material stack for facilitating subsequent attachment of a soldermaterial thereupon. For example, the at least one bonding pad materialmay include a vertical stack of a copper portion and an under bumpmetallurgy (UBM) stack portion, or a vertical stack of an aluminumportion and a UBM stack portion. An exemplary UBM stack portion caninclude, from bottom to top, a Ti/Cu, layer, a Ni layer, and a Cu layer.

The at least one bonding pad material and the metallic liner materialcan be subsequently patterned, for example, by applying and patterning aphotoresist layer thereabove, and by transferring the pattern in thephotoresist layer through the at least one bonding pad material and themetallic liner material. Various bonding pads 16 can be formed directlyon a respective one of the connection pads 640. Additional bonding pads,such as at least one source bonding pad 14 illustrated in FIG. 21, maybe formed directly on the distal surface of a source layer (such as thedoped semiconductor material layer 218). Bonding wires 15 can be bondedto a respective one of the bonding pads (14, 16) as illustrated in FIG.21. A backside bonding wire 715 can be bonded to each backside bondingpad 716. Alternatively, the bonding pad 16 may be omitted, and thebonding wire 15 is deposited into the TV cavity 269 to directlyphysically contact the connection pad 340, similar to the configurationshown in FIG. 23Q.

Generally, at least one backside dielectric layer (230, 250, 260) can beformed over the source layer (such as the doped semiconductor materiallayer 218 and the metallic source layer 640). Each backside bonding pad16 can be formed over a distal surface of the at least one backsidedielectric layer (230, 250, 260). Each backside bonding pad 16 cancomprise a via portion that extends through the at least one backsidedielectric layer (230, 250, 260). The at least one backside dielectriclayer (230, 250, 260) can include a backside polymer dielectric layer260 that contacts the metallic material portion of a compositeconnection pad (238, 640), and extends over the source layer (such asthe doped semiconductor material layer 218 and the metallic source layer640). In one embodiment, the at least one backside dielectric layer(230, 250, 260) can comprise a stack of a silicon oxide layer (such asthe backside isolation dielectric layer 230), a silicon nitride layer(such as the backside passivation dielectric layer 250), and adielectric polymer layer (such as the backside polymer dielectric layer260). At least a subset of the backside bonding pads 16 can be formedthrough the at least one backside dielectric layer (230, 250, 260) on adistal surface of a respective composite connection pad (238, 640).

At least one backside bonding pad 16 can be electrically connected to apass-through via structure 8P, and can be electrically isolated from thesource layer (such as the doped semiconductor material layer 218 and themetallic source layer 640). The at least one backside bonding pad 16 canbe formed over the dielectric material portion 65, and can have an arealoverlap with the dielectric material portion 65 in a plan view. Eachcomposite connection pad (238, 640) can contact a distal surface of arespective pass-through via structure 8P (such as a respectivepad-connection pass-through via structure 8P1), and can contact aproximal surface of a respective backside bonding pad 16.

In one embodiment, the source layer (218, 440) comprising a firstportion of a conductive material (such as the doped semiconductormaterial layer 218) that is electrically connected to end portions ofthe vertical semiconductor channels 60 that are distal from an interfacebetween the logic die 700 and the memory die 1000. A pass-through viastructure (such as a pad-connection pass-through via structure 8P1) canhave a vertical extent that is greater than a vertical thickness of thealternating stack (32, 46), and can vertically extend through thedielectric material portion 65. A connection pad (238, 640) can comprisea second portion of the conductive material (comprising thesemiconductor connection pad 238), can contact a distal surface of thepass-through via structure (such as the pad-connection pass-through viastructure 8P1), and can be electrically isolated from the source layer(218, 440).

In one embodiment, the source layer (218, 440) contacts a distalhorizontal surface of the alternating stack (32, 46), and the connectionpad (238, 640) contacts a distal horizontal surface of the dielectricmaterial portion 65.

In one embodiment, the conductive material comprises a dopedsemiconductor material. In one embodiment, the vertical semiconductorchannels 60 have a doping of a first conductivity type, and theconductive material comprises a doped semiconductor material having adoping of a second conductivity type that is an opposite of the firstconductivity type. In one embodiment, the first portion of theconductive material (comprising the doped semiconductor material layer218) contacts a distal horizontal surface of the alternating stack (32,46), and the second portion of the conductive material (comprising thesemiconductor connection pad 238) contacts a distal horizontal surfaceof the dielectric material portion 65.

In one embodiment, the source layer (218, 440) can comprise a layerstack of a source barrier liner 442 contacting a distal surface of thefirst portion of the conductive material (comprising the dopedsemiconductor material layer 218) and a metallic material layer 444comprising the first portion of the metallic material and overlying thesource barrier liner 442. The connection pad (238, 640) comprises alayer stack of a pad barrier liner 642 contacting a distal surface ofsecond portion of the conductive material (comprising the semiconductorconnection pad 238) and a pad metal portion 644 comprising the secondportion of the metallic material. In one embodiment, the source barrierliner 442 and the pad barrier liner 642 have a same material compositionand a same thickness.

In one embodiment, the pass-through via structure (such as thepad-connection pass-through via structure 8P1) comprises a metallicbarrier layer 82 in contact with the second portion of the conductivematerial and a sidewall of the dielectric material portion 65, and ametallic fill material portion 84 that is spaced from the connection pad(238, 640) and from the dielectric material portion 65 by the metallicbarrier layer 82.

Referring to FIG. 26H, another embodiment of the third alternativeconfiguration of the bonded assembly is illustrated, which can bederived from the bonded assembly of FIG. 26G by omitting the ionimplantation process that forms the source cap regions 606. In thiscase, the doped semiconductor material layer 218 directly contacts endportions of the vertical semiconductor channels 60. The dopedsemiconductor material layer 218 comprises a portion of a source layerthat functions as a common source for all vertical NAND stringsincluding the vertical semiconductor channels 60.

Referring to all drawings and according to various embodiments of thepresent disclosure, a semiconductor structure comprising a memory die1000 bonded to a logic die 700 is provided. The memory die 1000comprises: an alternating stack of insulating layers 32 and electricallyconductive layers 46; memory stack structures 55 extending through thealternating stack (32, 46), wherein each of the memory stack structures55 comprises a respective vertical semiconductor channel 60 and arespective memory film 50; a dielectric material portion 65 in contactwith sidewalls of the alternating stack (32, 46); and a source layer{218, 240, (218, 440)} comprising a first conductive material andelectrically connected to end portions of the vertical semiconductorchannels 60 that are distal from an interface between the logic die 700and the memory die 1000.

In one embodiment, the semiconductor structure further comprises apass-through via structure 8P (such as a pad-connection pass-through viastructure 8P1 or a source-connection pass-through via structure 8P2)having a vertical extent that is greater than a vertical thickness ofthe alternating stack (32, 46) and vertically extending through thedielectric material portion 65; and a connection pad {340, (238, 640)}contacting a distal surface of the pass-through via structure, andelectrically isolated from the source layer{218, 240, (218, 440)}. Inone embodiment, the connection pad 340 comprises a second conductivematerial (e.g., metallic material) that is different from the firstconductive material. In another embodiment, the connection pad 340comprises a second portion of the first conductive material.

In one embodiment, a backside bonding pad 16 located over the dielectricmaterial portion 65, electrically connected to the pass-through viastructure 8P, and electrically isolated from the source layer {218, 240,(218, 440)}.

In one embodiment, at least one backside dielectric layer (230, 250,250) can be located on the alternating stack (32, 46) and the dielectricmaterial portion 65. The backside bonding pad 16 is located on a distalsurface of the at least one backside dielectric layer (230, 250, 250).In one embodiment, the backside bonding pad 16 comprises a via portionthat extends through the at least one backside dielectric layer (230,250, 250).

In one embodiment, a connection pad {340, (238, 640)} can contact adistal surface of the pass-through via structure (such as apad-connection pass-through via structure 8P1) and can contact aproximal surface of the backside bonding pad 16. In one embodiment, theconnection pad {340, (238, 640)} comprises a metallic material portion(such as a pad metal portion (344, 644)); and at least one backsidedielectric layer (230, 250, 250) contacts a distal surface of themetallic material portion and extends over the source layer {218, 240,(218, 440)}. In one embodiment, the source layer {218, 240, (218, 440)}comprises at least one of: a doped semiconductor material layer 218; anda metallic material layer (240, 440) having a same material compositionas the metallic material portion (such as a pad metal portion (344,644).

In one embodiment, the connection pad (238, 640) comprises a verticalstack of a doped semiconductor material portion (such as a semiconductorconnection pad 238) and the metallic material portion 640; and thesource layer (218, 440) comprises a vertical stack of a dopedsemiconductor material layer 218 having a same material composition asthe doped semiconductor material portion (such as the semiconductorconnection pad 238) and a metallic material having a same materialcomposition as the metallic material portion 640.

In one embodiment, the at least one backside dielectric layer (230, 250,260) comprises a stack of a silicon oxide layer (comprising a backsideisolation dielectric layer 230), a silicon nitride layer (comprising abackside passivation dielectric layer 250), and a dielectric polymerlayer (comprising a backside polymer dielectric layer 260).

In one embodiment, a distal portion of the pass-through via structure 8Pprotrudes from a horizontal plane including a horizontal interfacebetween the connection pad {340, (238, 640)} and the dielectric materialportion 65 along a vertical direction that points away from theinterface between the logic die 700 and the memory die 1000. In oneembodiment, the pass-through via structure 8P comprises: a metallicbarrier layer 82 comprising a metallic nitride material; and a metallicfill material portion 84 embedded in the metallic barrier layer 82, notcontacting the connection pad {340, (238, 640)}, and spaced from theconnection pad {340, (238, 640)} by a cap portion of the metallicbarrier layer 82 that is contained within the distal portion of thepass-through via structure 8P.

In one embodiment, distal surfaces of the memory films 50 are locatedwithin a horizontal plane including a horizontal interface between thesource layer {218, 240, (218, 440)} and the alternating stack (32, 46)or are more proximal to the interface between the logic die 700 and thememory die 1000 than the interface between the source layer {218, 240,(218, 440)} and the alternating stack (32, 46) is to the interfacebetween the logic die 700 and the memory die 1000.

In one embodiment, interfaces between a semiconductor material of thevertical semiconductor channels 60 and the source layer {218, 240, (218,440)} protrude from the horizontal plane including the horizontalinterface between the source layer {218, 240, (218, 440)} and thealternating stack (32, 46) along a vertical direction that points awayfrom the interface between the logic die 700 and the memory die 1000.

In one embodiment, the logic die 700 comprises a peripheral circuitryconfigured to operate memory elements in the memory stack structures 55and to drive the electrically conductive layers 46.

The various embodiments of the present disclosure can be employed toprovide a bonded assembly of a memory die 1000 and a logic die 700including backside bonding pads 16 and a source layer {218, 240, (218,440)} that laterally connects distal end portions of verticalsemiconductor channels 60 of memory stack structures 55 andsource-connection pass-through via structures 8P2. Pad connectionpass-through via structures 8P1 provide vertical electrical connectionthrough the memory level of the memory die 100 to the backside bondingpads 16.

The various embodiments of the present disclosure may provide any one ormore of the following advantages. The contact resistance may be reducedbetween the semiconductor channel 60 and the source line by increasingthe semiconductor channel surface area above the dielectric materialportion 65. Dopant profile of in the end of the semiconductor channel iscontrollable by ion implantation shown in FIG. 23D. Plane separation maybe accomplished by silicon oxide deposition while forming the sourceregion. The memory cells may be erased either GIDL or well erase method,which increases erasing flexibility. The pad area aspect ratio may beimproved to improve step coverage at pad area. Finally, the step heightof the polyimide layer 260 may be reduced which leads to reducedpolyimide thickness.

Although the foregoing refers to particular preferred embodiments, itwill be understood that the claims are not so limited. It will occur tothose of ordinary skill in the art that various modifications may bemade to the disclosed embodiments and that such modifications areintended to be within the scope of the claims. Compatibility is presumedamong all embodiments that are not alternatives of one another. The word“comprise” or “include” contemplates all embodiments in which the word“consist essentially of” or the word “consists of” replaces the word“comprise” or “include,” unless explicitly stated otherwise. Where anembodiment using a particular structure and/or configuration isillustrated in the present disclosure, it is understood that the claimsmay be practiced with any other compatible structures and/orconfigurations that are functionally equivalent provided that suchsubstitutions are not explicitly forbidden or otherwise known to beimpossible to one of ordinary skill in the art. All of the publications,patent applications and patents cited herein are incorporated herein byreference in their entirety.

The invention claimed is:
 1. A semiconductor structure comprising amemory die bonded to a logic die, the memory die comprising: analternating stack of insulating layers and electrically conductivelayers; memory stack structures extending through the alternating stack,wherein each of the memory stack structures comprises a respectivevertical semiconductor channel and a respective memory film; adielectric material portion in contact with sidewalls of the alternatingstack; and a source layer comprising a first conductive material andelectrically connected to end portions of the vertical semiconductorchannels that are distal from an interface between the logic die and thememory die.
 2. The semiconductor structure of claim 1, wherein: thevertical semiconductor channels comprise a semiconductor material havinga doping of a first conductivity type; and the source layer comprises adoped semiconductor material having a doping of a second conductivitytype that is an opposite of the first conductivity type.
 3. Thesemiconductor structure of claim 1, further comprising source capregions including a doped semiconductor material portion having a dopingof the second conductivity type and located directly on an end portionof a respective one of the vertical semiconductor channels, wherein thesource layer contacts each of the source cap regions.
 4. Thesemiconductor structure of claim 1, further comprising: a pass-throughvia structure having a vertical extent that is greater than a verticalthickness of the alternating stack and vertically extending through thedielectric material portion; and a connection pad comprising a secondconductive material that is different from the first conductivematerial, contacting a distal surface of the pass-through via structure,and electrically isolated from the source layer.
 5. The semiconductorstructure of claim 4, wherein the second conductive material comprises ametallic material.
 6. The semiconductor structure of claim 5, wherein:the connection pad comprises a pad barrier liner comprising a metallicbarrier material and contacting a distal horizontal surface of thedielectric material portion, and a pad metal portion comprising themetallic material and contacting the pad barrier liner; and thepass-through via structure comprises a metallic barrier layer in contactwith the pad barrier liner and a sidewall of the dielectric materialportion, and a metallic fill material portion that is spaced from theconnection pad and from the dielectric material portion by the metallicbarrier layer.
 7. The semiconductor structure of claim 6, wherein adistal portion of the metallic barrier layer protrudes from a horizontalinterface between the dielectric material portion and the connection padand into the connection pad, and is laterally surrounded by theconnection pad.
 8. The semiconductor structure of claim 4, furthercomprising a backside bonding pad located over the dielectric materialportion, contacting a distal surface of the connection pad, andelectrically isolated from the source layer.
 9. The semiconductorstructure of claim 8, further comprising at least one backsidedielectric layer, wherein the backside bonding pad is located on adistal surface of the at least one backside dielectric layer, whereinthe backside bonding pad comprises a via portion that extends throughthe at least one backside dielectric layer.
 10. The semiconductorstructure of claim 4, further comprising a bonding wire contacting adistal surface of the connection pad, and electrically isolated from thesource layer.
 11. The semiconductor structure of claim 1, wherein distalsurfaces of the memory films are located within a horizontal planeincluding a horizontal interface between the source layer and thealternating stack or are more proximal to the interface between thelogic die and the memory die than the interface between the source layerand the alternating stack is to the interface between the logic die andthe memory die.
 12. The semiconductor structure of claim 11, whereininterfaces between a semiconductor material of the verticalsemiconductor channels and the source layer protrude from the horizontalplane including the horizontal interface between the source layer andthe alternating stack along a vertical direction that points away fromthe interface between the logic die and the memory die.
 13. Thesemiconductor structure of claim 1, wherein the logic die comprises aperipheral circuitry configured to operate memory elements in the memorystack structures and to drive the electrically conductive layers.
 14. Amethod of forming a semiconductor structure, comprising: forming amemory die over a carrier substrate, wherein the memory die comprisesmemory stack structures that vertically extend through an alternatingstack of insulating layers and electrically conductive layers, adielectric material portion that contacts sidewalls of the alternatingstack, and a pass-through via structure that vertically extends throughthe dielectric material portion, wherein each of the memory stackstructures comprises a respective vertical semiconductor channel and arespective memory film; physically exposing a distal end of each of thevertical semiconductor channels and a distal end of the pass-through viastructure after removing the carrier substrate; forming a source layercomprising a first conductive material directly on a semiconductormaterial of the distal end of each of the vertical semiconductorchannels; and forming a connection pad comprising a second conductivematerial that is different from the first conductive material directlyon the pass-through via structure and the dielectric material portion,wherein the connection pad is electrically isolated from the sourcelayer.
 15. The method of claim 14, wherein: the vertical semiconductorchannels comprise a semiconductor material having a doping of a firstconductivity type; and the first conductive material comprises a dopedsemiconductor material having a doping of a second conductivity typethat is an opposite of the first conductivity type.
 16. The method ofclaim 15, wherein: the second conductive material comprises a metallicmaterial; and the method comprises removing a first portion of themetallic material that overlies the source layer without removing asecond portion of the metallic material from above the pass-through viastructure, wherein the connection pad comprises the second portion ofthe metallic material.
 17. The method of claim 15, wherein: the secondconductive material comprises a metallic material; and the methodcomprises patterning the metallic material into a first portion of themetallic material that overlies the source layer and a second portion ofthe metallic material located over the pass-through via structure. 18.The method of claim 14, further comprising: patterning the firstconductive material to form a first conductive material layer contactingthe semiconductor material of the distal end of each of the verticalsemiconductor channels; forming a backside isolation dielectric layerover the first conductive material layer and over the pass-through viastructure; and forming an opening through the backside isolationdielectric layer, wherein a distal surface of the pass-through viastructure is physically exposed.
 19. The method of claim 18, wherein:the second conductive material is deposited on the distal surface of thepass-through via structure through the opening in the backside isolationdielectric layer; and the method comprises patterning the secondconductive material, wherein a remaining portion of the secondconductive material contacting the pass-through via structure comprisesthe connection pad.
 20. The method of claim 14, further comprising:forming at least one backside dielectric layer over the source layer andthe connection pad; and forming a backside bonding pad through the atleast one backside dielectric layer directly on a distal surface of theat least one backside dielectric layer.